Multi-Layer Display Apparatus with LTPS and Oxide Transistors

The patent divides the thin film transistor structure into multiple separate layers, with each layer containing transistors made of different semiconductor materials (e.g., LTPS in one layer, oxide semiconductor in another layer). This segmentation allows each semiconductor type to be optimized independently while preventing mutual damage, as harmful factors affecting one semiconductor type are contained within its specific layer and do not directly impact other semiconductor layers.

The patent introduces intermediate layers between different semiconductor layers, including buffer layers and insulating layers. These intermediary layers act as protective barriers that prevent damage transmission between different semiconductor materials. For example, buffer layers protect semiconductor elements from damage during manufacturing processes, while insulating layers prevent electrical interference and charge accumulation that could harm adjacent semiconductor types.

The patent segments the manufacturing process into distinct stages for different semiconductor layers. Each layer can be manufactured using optimized processes specific to that semiconductor type without interfering with other layers. This segmentation simplifies the overall manufacturing complexity by allowing parallel or sequential processing of different semiconductor types with their respective optimal conditions.

The patent designs the multi-layer structure with universal manufacturing approaches where certain process steps can be applied across multiple layers simultaneously. For example, similar deposition and patterning techniques can be used for different semiconductor layers, reducing the need for entirely separate manufacturing lines and simplifying the overall process complexity despite the increased device structure.

The patent uses buffer layers and insulating layers as intermediary protective barriers between semiconductor elements and potential hydrogen sources. These intermediary layers effectively block hydrogen diffusion without requiring additional metal layers, thereby maintaining manufacturing process simplicity while achieving the desired protection effect.

The patent employs thin buffer and insulating layers that can be deposited using standard semiconductor manufacturing techniques. These layers provide effective hydrogen barrier functionality at low cost and with simple processes, replacing the need for more complex and expensive metal barrier layers. The thin nature of these layers allows for easy integration without significantly increasing manufacturing complexity.