3D NAND Memory Block Layout With Elliptical Slit Separation
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Solution Overview
Problem
Existing memory devices face challenges in achieving high integration density while maintaining a simplified manufacturing process, particularly in non-volatile memory devices like NAND flash memory, where the integration degree and manufacturing complexity hinder cost-effective data storage solutions.
Innovation Solution
A memory device design incorporating a stack structure with main plugs separated by ellipse-shaped separation patterns and slit patterns, along with a method of manufacturing that includes forming sub-plugs, slit holes, and conductive layers to enhance integration and simplify the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional memory device structures and manufacturing processes are used, then manufacturing processes are complex and integration density is limited, but increasing integration density requires more complex structures and processes
Solution Approach 1:
The memory device is divided into multiple memory blocks separated by slit patterns extending in the third direction. Each memory block contains independently controllable memory cells, allowing selective operation of different blocks. This segmentation enables higher integration density by organizing memory cells into manageable units while simplifying the overall manufacturing process through modular construction.
Solution Approach 2:
The patent transitions from planar memory structures to three-dimensional stacked structures with plugs extending in the third direction (vertical direction). Multiple material layers are stacked alternately to form memory cells in three dimensions, significantly increasing integration density without proportionally increasing manufacturing complexity.
2Quantity of substance
If more memory cells are integrated to store large amounts of data, then data storage capacity increases, but manufacturing cost increases due to process complexity
Solution Approach 1:
Multiple memory blocks share common source lines and bit lines, merging peripheral circuit resources across blocks. The slit patterns serve dual purposes: separating memory blocks physically while allowing shared access through common wiring structures. This merging approach increases data storage capacity while reducing the number of separate manufacturing steps required for each block.
Solution Approach 2:
The slit patterns perform multiple functions: they separate memory blocks, provide isolation between blocks, and allow for selective access to different blocks through shared source and bit lines. This multi-functionality reduces the need for additional specialized structures, thereby lowering manufacturing complexity and cost while increasing storage capacity.
Data Source
AI summary
A memory device, and a method of manufacturing the same, includes a stack structure and main plugs passing through the stack structure, the main plugs being spaced apart from each other in a first direction. The memory device also includes a separation pattern separating the main plugs in a second direction and a slit pattern separating the stack structure into first and second memory blocks, the slit pattern having an ellipse shape.