NAND Flash ECC Recalculation for Temperature-Induced Error Bits
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Solution Overview
Problem
Conventional NAND flash memory experiences data errors when operated within a wide temperature range, particularly at high and low temperatures, leading to accumulation of error bits that cannot be corrected, resulting in incorrect data.
Innovation Solution
A NAND flash controlling system and method that includes a temperature-sensing unit, a main control module, and error-correcting units to detect temperature changes, generate data-transmitting signals when temperatures exceed thresholds, and recalculates error-correcting codes to write data into a destination block, thereby reducing the increase of error bits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If NAND flash operates within a wide temperature range (−20°C to 70°C), then the adaptability of the device is improved, but data errors accumulate due to direct writing without re-calculating ECC
Solution Approach 1:
The system performs preliminary temperature detection and evaluation before writing data to the NAND flash. When abnormal temperature conditions are detected, the system pre-calculates and applies updated ECC codes before the actual write operation, preventing data errors from occurring in the first place rather than correcting them after accumulation
Solution Approach 2:
The system changes the operational parameters by dynamically adjusting ECC calculation and application based on temperature conditions. At abnormal temperatures (≤−10°C or ≥40°C), the system activates enhanced ECC processing, while at normal temperatures it uses standard direct writing, thus adapting the reliability mechanism to match environmental conditions
2Productivity
If error-correcting codes are not re-calculated at high and low temperatures, then the writing rate is maintained, but the number of error bits increases to a significant degree
Solution Approach 1:
The system implements a feedback mechanism where the temperature sensing unit continuously monitors temperature conditions and feeds this information to the main control unit. Based on this feedback, the system dynamically determines whether to perform ECC recalculation, creating a closed-loop control system that balances writing efficiency with error prevention based on real-time environmental conditions
Solution Approach 2:
Instead of recalculating ECC for every write operation (which would significantly reduce writing rate), the system applies partial action by performing ECC recalculation only when necessary - specifically when abnormal temperature conditions are detected. This selective approach maintains high writing rates under normal conditions while providing enhanced error protection when needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively reduces the accumulation of error bits by recalculating error-correcting codes and writing data correctly, even in abnormal temperature conditions, ensuring data integrity.
Implementation Method 1
The temperature-sensing unit is configured for detecting a flash temperature
Data Source
AI summary
A NAND flash controlling method includes the steps of: configuring a temperature-sensing unit to detect the flash temperatures and a source block to store source data; configuring a main control unit to receive the flash temperatures for calculating a temperature difference, to generate a data-transmitting signal if the current temperature is abnormal and the temperature difference is too large; configuring a control unit to read and transmit the source data; configuring a data-buffering unit to receive and store the source data; configuring an error-correcting unit to receive a source error-correcting code and a source bit-error rate to re-calculate an updated error-correcting code; configuring a flash-buffering unit to receive the updated error-correcting code and the source data; and, configuring the control unit to utilize the updated error-correcting code to write the source data into the destination block from the flash-buffering unit. In addition, a NAND flash controlling system is also provided.


