NAND Flash Sensing Circuitry Power Domain Segmentation
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Solution Overview
Problem
The power consumption of sensing circuitry in 3D NAND devices is high due to the voltage requirements for sensing and programming operations, which limits the ability to reduce voltage supply without compromising the functionality of the sensing/bit line driving circuits.
Innovation Solution
Implementing a dual power domain approach within the sensing circuitry, where a first power domain with a higher voltage supplies power to the bit line driving circuitry, and a second power domain with a lower voltage supplies power to the latches and sense amplifier latch, thereby reducing overall power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single high voltage power domain is used to supply power to the sensing circuitry, then the sensing and programming operations can be performed, but the power consumption is high
Solution Approach 1:
The sensing circuitry is divided into two separate power domains: a first power domain providing high voltage to the bit line driving circuitry for sensing/programming operations, and a second power domain providing low voltage to the latches and sense amplifier latch. This segmentation allows each sub-circuit to operate at the minimum necessary voltage, reducing overall power consumption while maintaining sensing functionality.
Solution Approach 2:
Different voltage levels are applied to different parts of the sensing circuitry based on their specific functional requirements. The bit line driving circuitry receives high voltage locally to perform sensing operations, while the latches receive low voltage locally for data storage, optimizing power consumption in each region.
2Use of energy by moving object
If voltage supply is reduced to lower power consumption, then energy efficiency improves, but the functionality of sensing/bit line driving circuits is compromised
Solution Approach 1:
The sensing circuitry is segmented into operational components (bit line driving circuitry) that require high voltage and storage components (latches) that can operate at low voltage. This allows the system to reduce overall power consumption by supplying low voltage to the latches while maintaining high voltage supply to the bit line driving circuitry when sensing operations are active.
Solution Approach 2:
The power domains are dynamically configured based on operational mode. During sensing operations, the first power domain provides high voltage to the bit line driving circuitry. During non-operational modes, the voltage supply can be reduced or shut off, allowing the sensing circuitry to adapt its power consumption dynamically while maintaining functionality when needed.
Data Source
AI summary
Power consumption of sensing circuitry in a NAND Flash device is reduced by reducing the voltage supply to a portion of logic circuits in sensing circuitry. A first power domain provides power to a first portion of the logic circuits in the sensing circuity and a second power domain provides power to a second portion of the logic circuits in the sensing circuitry. The first power domain has a higher voltage than the second power domain.


