Nonvolatile Stacked NAND Memory Field Enhancement
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Solution Overview
Problem
Resistive RAM technologies, particularly WOx RRAM, face challenges with high current requirements for memory cell formation and the need for distinct forming operations, which can be inefficient and require specific polarity conditions.
Innovation Solution
A memory device design featuring a metal-oxide memory element with a conductive element and a nonconductive element, where the conductive element has a 'U' shape with varying distances from the electrodes, enhancing the electrical field and allowing for self-aligned field enhancement, eliminating the need for a separate forming operation and reducing current requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional plug-shaped memory cell structure is used, then the memory cell can be formed, but a relatively high current requirement is needed for forming the memory cell
Solution Approach 1:
The conductive element is designed with non-uniform geometry, having a first portion closer to the first electrode and a second portion closer to the second electrode. This creates localized field enhancement at specific regions within the memory cell, allowing lower overall current requirements while achieving sufficient field strength for reliable operation
Solution Approach 2:
The conductive element exhibits asymmetric positioning relative to the electrodes, with the first portion being closer to the first electrode than the second portion is to the second electrode. This asymmetric configuration creates an enhanced electrical field distribution that reduces the current needed for memory cell formation and operation
2Ease of operation
If a conventional memory cell structure is used, then the memory cell can operate, but a distinct forming operation is required before regular operation
Solution Approach 1:
The conductive element's enhanced field distribution allows the forming operation to be merged with the initial reset or set operation. The field enhancement provided by the non-uniform conductive element structure ensures that the first regular operation is sufficient to form the memory cell, eliminating the need for a separate forming step
Solution Approach 2:
The conductive element is pre-configured with a non-uniform geometry that creates enhanced electrical field distribution before operation begins. This preliminary structural arrangement ensures that the field strength is sufficient during the first regular operation to complete the forming process, eliminating the need for a separate forming operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the electrical field within the memory cell, reducing current needs and enabling efficient operation without a distinct forming process, improving memory cell performance and endurance across multiple cycles.
Implementation Method 1
this arrangement enhances the electrical field in the nonconductive element, and also in the metal-oxide memory element portion proximate to the nonconductive element
Data Source
AI summary
A memory cell is arranged to enhance the electrical field of the memory element. The memory cell has a metal-oxide memory element, a nonconductive element, and a conductive element. The metal-oxide memory element is in a current path between a first electrode at a first voltage and a second electrode at a second voltage. The nonconductive element is adjacent to the metal-oxide memory element.