Solid-State Devices TRIZ Cases

An oxide and resin mixture absorbs internal moisture to prevent organic material corrosion and extend OLED lifespan.

A memory cell uses a U-shaped conductive element to enhance the electrical field within the metal-oxide layer.

A color micro-light emitting diode uses a blue pump source and red phosphor converter to generate red light.

Segmented quantum emitters localize lattice dislocations in solid state lighting dies, reducing current leakage and improving optical efficiency.

Feedback control adjusts resin discharge quantity based on measured height, resolving viscosity-induced fluctuations that compromise chromaticity stability.

A flexible touch control display module integrates a polarizing film layer directly onto the touch control layer using an adhesive and photo alignment structure.

Strategic protrusions act as soft and hard stoppers to absorb shocks, preventing stiction and damage in MEMS sensors.

A photoelectric converting device uses a tapered upper insulator portion to ensure accurate alignment during back-side illumination sensor fabrication.

Pipe-shaped insulation thermally isolates the bottom electrode heater, reducing current requirements for phase change.

An acrylic polymeric binder enhances solubility of organic compounds, reducing solvent usage while maintaining film formation quality.

A semiconductor storage element uses a hydrogen adjustment region to occlude gas and protect information holding power.

A piezo-junction device couples a piezoelectric element to a semiconductor junction, applying mechanical strain to alter electrical properties.

Inorganic sealing layers positioned away from segmentation lines suppress crack generation to prevent moisture and oxygen infiltration.

A clad gate wiring structure reduces resistance in liquid crystal displays, preventing signal delay and hillock formation without additional mask processes.

A light combination unit merges monochrome and double color LED panels to collimate light along one direction.

Segmented conducting layer with bridging via holes prevents antenna effect damage to driver circuits during manufacturing.

A connection electrode links the thin film transistor source to a data line at a climbing position relative to the gate.

A tunnel barrier layer protects light emitting structures from electrostatic discharge damage while maintaining electrical connectivity.

A pixel structure uses isotropic etching to form source drain regions and a stacked capacitor electrode.

A cross point memory array uses a select device to isolate ferroelectric cells during read operations.

A semiconductor light-receiving device uses a resin layer with varying thickness to reflect light onto the mesa.

A flip chip LED uses an underfill layer and diffuser to enhance light distribution.

A photoresist peel process creates spacer patterns on display substrates without exposing underlying thin film transistors to ultraviolet light.

An intermediary sheet absorbs secondary electrons emitted from the tray, preventing reentry into wafers and reducing electrical characteristic variations.

An L-shaped conductive wire forms a second storage capacitor to reduce parasitic capacitance and prevent pixel-to-pixel crosstalk.

A multi-layer electrode array substrate increases the equivalent horizontal electric field to lower driving voltage requirements.

Bent step portions on conductive patterns create vertical spacing buffers in stacked semiconductor devices.

A semiconductor module integrates a diode bridge circuit with a current sensor and an IGBT-based current limiting circuit.

Stacked substrates form enclosed cavities that shield superconducting qubits, reducing material imperfection sensitivity and extending coherence times.

A patterning method uses segmented masking films to deposit materials in precise locations on a substrate.

Phosphorescent exciton trap mediates energy transfer to low-concentration emitters, resolving charge carrier mobility bottlenecks.

Dynamic biasing modifies transistor threshold voltages to enable reliable writing in SRAM cells.

A stacked semiconductor structure combines amorphous and crystalline silicon layers to boost electron-hole pair generation in display photosensors.

An inverted LED die design eliminates wire bonding and blocking electrodes, enhancing luminous efficiency by 1.6 to 3 times while reducing module thickness.

Vertical channel structures penetrate stacked electrodes and data storing patterns, overcoming planar area constraints to boost integration density.

Segmented OLED cathodes lower sheet resistance to eliminate voltage drops and ensure uniform brightness.

Resin carrier embedding eliminates exposed sidewalls that absorb light, boosting extraction efficiency while cutting silicone usage and packaging costs.

Organic polymeric multi-metallic composites enable low-temperature processing and high dielectric constants, resolving substrate compatibility issues.

Relocating photosensitive units to the base substrate side enables accurate luminance compensation while maintaining high opening rates and uniformity.

A transparent electrode combines a patterned metal conductive layer with a polymer conductive layer containing fluorinated and non-fluorinated polymer acids.

Curved packaging transitions between isolated pixel segments reduce optical crosstalk while maintaining high display resolution.

An isolation line along the pixel electrode mitigates electric field interference from data signals, resolving mura defects in large panel displays.

Transparent conductive lines link peripheral driving circuits to pixels, resolving low light transmittance that degrades under-screen camera photography.

Overlapping adjacent color matrix patterns supports thinner photo spacers, increasing cell gap and reducing side light leakage.

Rotation matrix generates reference waves for MEMS mirror phase estimation, reducing computational complexity.

Inkjet printing deposits distinct materials on continuous electrodes to create emission patterns, eliminating mask costs and simplifying manufacturing.

A segmented hard mask pattern enables selective dry etching of the field oxide layer to define FinFET active regions.

A Geiger mode avalanche photodiode array uses common contacts and varying quenching resistors to differentiate current pulses from individual pixels.

Optimizing singlet-triplet energy levels and dopant concentration prevents roll-off, extending service life while maintaining high color purity.

Alternating inorganic and organic layers resolve the contradiction between moisture-proof reliability and structural flexibility in encapsulation members.