Piezo-junction Device Fermi Level Modulation via Strain
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Solution Overview
Problem
Existing piezoelectric devices combined with semiconductor junctions lack efficient mechanisms to induce significant changes in Fermi levels, limiting their application in low-power devices and requiring exotic materials incompatible with silicon CMOS processing.
Innovation Solution
A piezo-junction device comprising a piezoelectric element with electrodes and semiconductor junctions in a fixed mechanical clamp, where an applied electrical field causes strain to the semiconductor junction, altering its Fermi levels and current characteristics, allowing for adjustable and efficient voltage/current changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If piezoelectric devices are combined with semiconductor junctions to enable low-power operation, then power consumption is reduced, but the ability to induce significant changes in Fermi levels is limited
Solution Approach 1:
The patent changes the material parameter by using III-V semiconductor materials (such as GaAs, InP) instead of conventional silicon, which have higher piezoelectric coefficients. This material substitution enables significant Fermi level changes under mechanical strain while maintaining low-power operation, directly resolving the contradiction between power consumption and Fermi level modulation efficiency
Solution Approach 2:
The invention creates a composite structure combining piezoelectric materials with III-V semiconductor junction devices. This composite approach leverages the strong piezoelectric effect in III-V materials to achieve both low power consumption and significant Fermi level changes, simultaneously satisfying both requirements of the contradiction
2Reliability
If exotic materials are used to achieve significant Fermi level changes, then the piezo-resistive effect is enhanced, but compatibility with silicon CMOS processing is lost
Solution Approach 1:
The patent modifies the piezoelectric response parameter by applying mechanical strain through piezoelectric actuators to III-V semiconductor junctions. This strain-induced piezoelectric effect achieves significant Fermi level changes using materials that can be integrated with silicon CMOS processes, resolving the contradiction between enhanced piezo-resistive effect and manufacturing compatibility
Solution Approach 2:
The invention introduces piezoelectric materials as an intermediary mechanism to induce strain in III-V semiconductor junctions. This intermediary approach enables control of Fermi levels through mechanical strain rather than requiring exotic bulk materials, maintaining CMOS compatibility while achieving the desired piezoelectric response
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The piezo-junction device offers flexible implementation, significant and efficient changes in voltage/current characteristics, suitable for low-power IoT devices, with reduced power requirements and simpler implementation in silicon CMOS processes, enabling adjustable transistor characteristics and high-speed operation.
Implementation Method 1
a piezoelectric element comprising two electrodes and piezoelectric material in-between... an applied electrical field may apply strain to the semiconductor junction device
Implementation Method 2
Piezoelectric devices have also been combined with devices showing the piezo-resistive effect. The piezo-resistive effect is a change in the electrical resistivity of the semiconductor or metal when mechanical strain is applied.
Data Source
AI summary
A piezo-junction device may be provided. The piezo-junction device comprises a piezoelectric element comprising two electrodes and piezoelectric material in-between, and a semiconductor junction device adjacent to the piezoelectric element such that one of the two electrodes of the piezoelectric element is in contact with the semiconductor junction device connecting the semiconductor junction device and the piezoelectric element electrically in series. Thereby, the semiconductor junction device and the piezoelectric element are together positioned in a fixed mechanical clamp such that the piezoelectric element with an applied electrical field applies strain to the semiconductor junction device causing a change in Fermi levels of the semiconductor junction device.