Semiconductor Storage Element Hydrogen Adjustment Region
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Solution Overview
Problem
Conventional methods for forming storage elements with different characteristics on the same substrate require multiple patterning steps, leading to increased manufacturing costs.
Innovation Solution
A semiconductor device with a storage element embedded in an insulating layer, connected by upper and lower electrodes, and covered by a protective film, which includes a hydrogen adjustment region within the insulating layer to occlude hydrogen and allow single patterning of storage elements with varying characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple patterning steps are performed to form storage elements with different characteristics, then the storage elements can have different characteristics, but the manufacturing cost increases
Solution Approach 1:
The patent applies local quality by introducing hydrogen adjustment regions with different hydrogen concentrations at specific locations within the insulating layer. These localized hydrogen concentration variations modify the tunnel barrier properties only in specific regions, enabling different storage element characteristics (such as different switching voltages or retention properties) without requiring multiple patterning steps. The hydrogen adjustment regions are formed by implanting hydrogen ions at different doses or energies in different areas, creating spatially varying local properties that differentiate storage element behavior.
2Adaptability or versatility
If multiple patterning steps are performed to form storage elements with different characteristics, then the storage elements can have different characteristics, but the number of manufacturing steps increases
Solution Approach 1:
The patent employs parameter changes by varying the hydrogen concentration parameter within the insulating layer to achieve different storage element characteristics. Instead of using multiple patterning steps to create different material layers or structures, the invention modifies the hydrogen concentration parameter (through ion implantation with different doses, energies, or annealing conditions) to tune the properties of the tunnel barrier. This single-step parameter modification approach enables the formation of storage elements with different characteristics while maintaining high manufacturing efficiency and reducing process complexity.
3Adaptability or versatility
If hydrogen is present in the insulating layer, then the storage element characteristics can be adjusted, but hydrogen-induced changes in information holding power occur
Solution Approach 1:
The patent converts the harmful effect of hydrogen (which can cause unintended changes in storage element properties) into a beneficial tool for controlled characteristic adjustment. By intentionally introducing hydrogen adjustment regions with precisely controlled hydrogen concentrations, the invention transforms hydrogen from a contaminant that degrades reliability into a deliberate engineering parameter that enables tunable storage element characteristics. The hydrogen adjustment regions are designed to provide controlled hydrogen release that modifies tunnel barrier properties in a predictable and useful manner, turning a previously problematic element into a functional feature.
Solution Approach 2:
The patent introduces hydrogen adjustment regions as intermediary structures between the storage element and the surrounding environment. These intermediary regions act as hydrogen reservoirs or buffers that mediate the interaction between the insulating layer and the storage element. The hydrogen adjustment regions control the hydrogen distribution and release rate, serving as an intermediate layer that enables characteristic adjustment while protecting the storage element from excessive or uncontrolled hydrogen exposure that would degrade information holding power.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces manufacturing costs by enabling the formation of storage elements with different characteristics on the same substrate through single patterning, while suppressing hydrogen-induced changes in the storage element's information holding power.
Implementation Method 1
a hydrogen adjustment region that occludes hydrogen
Data Source
AI summary
A semiconductor device (1) according to an embodiment of the present disclosure includes a storage element (31), an upper electrode (32), a lower electrode (33), a protective film (6), and a hydrogen adjustment region (7). The storage element (31) is embedded in an insulating layer (21). The upper electrode (32) connects the storage element (31) and a first contact (4). The lower electrode (33) is located on a side opposite to the upper electrode (32) across the storage element (31) to connect the storage element (31) and a second contact (5). The protective film (6) covers a peripheral surface of the laminated body (3) including the storage element (31), the upper electrode (32), and the lower electrode (33) except for a connection surface with the first contact (4) and a connection surface with the second contact (5). The hydrogen adjustment region (7) occludes hydrogen and is embedded in the insulating layer (21) with an insulating film (23) in the insulating layer (21) interposed between the hydrogen adjustment region (7) and the laminated body (3).