Semiconductor Module Diode Bridge Current Limiting Circuit

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Solution Overview

Problem

Existing semiconductor modules with diode bridge circuits face issues with delayed protective shutdown during power supply activation abnormalities, leading to module breakdown due to inability to control currents effectively.

Innovation Solution

A semiconductor module incorporating a diode bridge circuit, a current sensor, and a current limiting circuit with a switching element (such as an IGBT) that can be controlled by a protection circuit to manage current values, preventing both inrush and overcurrents by switching the element on and off.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a thyristor is used in the current limiting circuit to suppress inrush current, then inrush current is suppressed, but the module cannot be protected against overcurrent during power supply activation because the thyristor cannot be turned off once turned on

Engineering Contradiction:
Improveinrush current suppressionVSAvoidprotection against overcurrent during activation
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The patent changes the switching element from a thyristor (which cannot be turned off) to an IGBT (which can be turned on and off by changing its conduction state). This parameter change enables the current limiting circuit to dynamically control current flow, providing both inrush current suppression and overcurrent protection during power supply activation.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces a sensor that detects current values and feeds this information to a protection circuit. The protection circuit uses this feedback to control the switching element, turning it off when overcurrent is detected during power supply activation. This feedback mechanism enables real-time monitoring and protection against energization abnormalities.

Inventive Principle:
Principle #23Feedback

2Measurement precision

If only a sensor and protection circuit are added without a controllable switching element, then current detection is possible, but current control and protection during activation cannot be achieved

Engineering Contradiction:
Improvecurrent value detectionVSAvoidprotection function during activation
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent introduces a controllable switching element (IGBT) as an intermediary between the sensor/protection circuit and the power supply circuit. This switching element acts as a mediator that can be controlled by the protection circuit based on sensor feedback, enabling actual current control and protection during power supply activation.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS11183834B2Semiconductor module and power conversion apparatus having a diode bridge circuit and a protection circuit
Publication Date: 2021.11.23 MITSUBISHI ELECTRIC CORP
  • US11183834B2 patent drawing
  • US11183834B2 patent drawing
  • US11183834B2 patent drawing

AI summary

A semiconductor module includes a diode bridge circuit, a sensor configured to measure a current value of the diode bridge circuit, a current limiting circuit having an IGBT connected to the diode bridge circuit, and a protection circuit configured to switch ON and OFF the IGBT in accordance with the current value of the diode bridge circuit measured by the sensor.