NAND Memory Read-Voltage Correction Across Block Groups

The memory blocks are divided into two groups: first memory blocks that have been previously corrected and second memory blocks that have not been corrected. This segmentation allows the system to apply different correction strategies to different blocks, processing only the uncorrected blocks while reusing correction data from previously processed blocks, thereby reducing overall processing overhead while maintaining reading accuracy.

The system performs read voltage correction in advance for memory blocks during initial processing or maintenance operations. By pre-correcting the read voltage for second memory blocks using conversion correction amounts derived from first memory blocks, the system eliminates the need for time-consuming correction operations during actual data read operations, thus reducing processing overhead while ensuring accurate data reading.

Instead of calculating conversion correction amounts independently for each memory block, the system copies and reuses correction amounts from first memory blocks (which have known correction data) to generate correction amounts for second memory blocks. This copying approach ensures consistent correction across all blocks while dramatically reducing calculation complexity and processing time.

The correction amounts calculated for first memory blocks are made universally applicable to second memory blocks through the conversion process. A single set of correction data serves multiple purposes and multiple memory blocks, reducing the overall calculation burden while maintaining correction consistency across the entire memory system.