Nano-abrasive Slurry CMP Surface Roughness Treatment
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Solution Overview
Problem
The use of nano-abrasive slurries in chemical mechanical planarization (CMP) processes for semiconductor devices results in slow etch rates, making it impractical for manufacturing due to long processing times, as the etch rate with nano-abrasives is typically less than 200 angstroms per minute, which is not sufficient for advanced technology nodes requiring faster planarization.
Innovation Solution
Treating the surface of the semiconductor layer with a plasma process, a high-pressure diluted nano-abrasive slurry, or a wet etch/cleaning process to increase the surface roughness, allowing for improved etch rates during the CMP process using nano-abrasive slurries, which can achieve rates of 400 angstroms per minute or more.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If nano-abrasive slurry is used in CMP process, then surface quality is improved, but etch rate decreases to less than 200 angstroms per minute
Solution Approach 1:
The patent applies preliminary surface treatment (plasma treatment, chemical mechanical treatment, or chemical etching) to the semiconductor layer before the CMP process. This preliminary action modifies the surface properties to enhance the effectiveness of nano-abrasive particles, enabling faster etch rates (400 angstroms per minute or more) while maintaining the superior surface quality that nano-abrasives provide.
2Productivity
If conventional CMP with larger abrasives is used, then etch rate is faster, but surface quality and planarization precision deteriorate
Solution Approach 1:
The patent changes the physical and chemical parameters of the semiconductor layer surface through preliminary treatment processes. This modifies surface energy, roughness, and reactivity parameters, allowing nano-abrasive particles to interact more effectively with the surface, thereby achieving both high etch rates and excellent surface quality simultaneously.
3Productivity
If increased mechanical force is applied in CMP, then etch rate increases, but surface damage and manufacturing complexity increase
Solution Approach 1:
The patent replaces purely mechanical force application with a combination of chemical/physical surface treatment followed by controlled mechanical CMP. The preliminary surface treatment creates chemical bonds and surface modifications that enhance the mechanical action of nano-abrasives, achieving high etch rates without requiring excessive mechanical force, thus avoiding surface damage and process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The surface treatment methods enable a faster and more efficient CMP process with nano-abrasive slurries, allowing for single-step planarization without the need for additional processing stages or increased mechanical forces, reducing manufacturing time and cost while maintaining surface quality.
Implementation Method 1
Treating the surface of the semiconductor layer with a plasma process
Implementation Method 2
Chemical Mechanical Polishing (CMP) is a common practice in the formation of integrated circuits. Typically, CMP is used for the planarization of semiconductor wafers. CMP takes advantage of the synergetic effect of both physical and chemical forces for the polishing of wafers.
Implementation Method 3
CMP takes advantage of the synergetic effect of both physical and chemical forces for the polishing of wafers
Data Source
AI summary
A method includes forming a film over a substrate; increasing a surface roughness of the film; and planarizing the film using a first chemical mechanical planarization (CMP) process after increasing the surface roughness.