Nano-FET Gate Formation With Widened Spacer Openings
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Solution Overview
Problem
As semiconductor devices continue to integrate more components into a given area through reduced minimum feature sizes, challenges arise in efficiently forming and patterning nanostructures for improved performance and reliability.
Innovation Solution
The formation of nano-FETs involves creating alternating layers of semiconductor materials with high-etch selectivity, followed by etching and patterning to form nanostructures and fins, and subsequent processing steps including spacer formation and epitaxial source/drain regions to enhance device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If minimum feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but manufacturing precision and structural integrity become more difficult to maintain
Solution Approach 1:
The patent segments the fabrication process into multiple distinct stages: forming alternating semiconductor layers with high etch selectivity, depositing spacers, selectively removing materials, and creating fins and nanowires. Each stage is optimized independently to achieve the required precision at reduced feature sizes while maintaining overall integration density.
2Quantity of substance
If minimum feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but device reliability and performance become more difficult to ensure
Solution Approach 1:
The patent applies local quality by creating alternating layers of semiconductor materials with high etch selectivity, where each layer has specific properties optimized for its function. The spacer layers provide structural support in critical regions, while the semiconductor layers are optimized for electrical performance, ensuring device reliability even at reduced feature sizes.
Solution Approach 2:
The patent performs preliminary actions by forming the alternating semiconductor and spacer layers before final patterning and device formation. This preliminary structuring establishes a robust framework that maintains structural integrity and electrical properties throughout subsequent processing steps, ensuring device performance is not compromised by reduced feature sizes.
3Length of moving object
If complex patterning processes are used to form nanostructures, then smaller feature sizes can be achieved, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The patent employs periodic action through the formation of alternating layers of semiconductor materials and spacers that repeat throughout the structure. This periodic structure simplifies the patterning process compared to creating each feature individually, as the alternating layers provide a self-organizing template that guides subsequent etching and material removal steps to achieve smaller feature sizes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for precise and efficient fabrication of nano-FETs, improving integration density and performance by enabling smaller feature sizes while maintaining structural integrity and electrical properties.
Implementation Method 1
oxidizing a first portion of a sidewall of the plurality of spacers
Implementation Method 2
igniting the treatment precursor into a plasma
Data Source
AI summary
Semiconductor devices and methods of manufacture are presented. In embodiments a method of manufacturing the semiconductor device includes forming a fin from a plurality of semiconductor materials, depositing a dummy gate over the fin, depositing a plurality of spacers adjacent to the dummy gate, removing the dummy gate to form an opening adjacent to the plurality of spacers, widening the opening adjacent to a top surface of the plurality of spacers, after the widening, removing one of the plurality of semiconductor materials to form nanowires, and depositing a gate electrode around the nanowires.