Nano-scale LED Electrode Assembly with Insulation Film
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Solution Overview
Problem
The development of high-efficiency blue LED devices is hindered by manufacturing difficulties due to lattice constant mismatches in substrates, leading to defects in GaN epitaxial layers and reduced light extraction efficiency, as well as challenges in connecting nano-scale LED devices to electrodes without electrical short-circuits and achieving desired light extraction.
Innovation Solution
An LED lamp design featuring a nano-scale LED electrode assembly with a support body, base substrate, and insulation film covering the active layer to prevent electrical short-circuits, allowing nano-scale LED devices to be connected to both electrodes without short-circuits and improving light extraction efficiency by directing photons outward.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If nano-scale LED devices are connected directly to electrodes, then electrical connection is achieved, but electrical short-circuits occur between the active layer and electrodes
Solution Approach 1:
An insulation film is introduced as an intermediary layer between the nano-scale LED device and the electrodes. This film selectively insulates the active layer from the electrodes while allowing electrical connection at the semiconductor layer-electrode interfaces, thereby preventing short-circuits without compromising electrical connectivity
Solution Approach 2:
The insulation film is applied selectively to specific regions of the nano-scale LED device, particularly covering the active layer while leaving the semiconductor layer ends exposed for electrical connection. This localized insulation approach prevents short-circuits only where needed while maintaining electrical connectivity at critical interfaces
2Ease of manufacture
If GaN epitaxial layer is formed on substrate with mismatched lattice constant, then manufacturing is simplified, but defects occur and efficiency is reduced
Solution Approach 1:
The patent changes the lattice constant parameter of the substrate by using a buffer layer with different material composition (e.g., AlGaN buffer layer with varying Al content) to gradually transition from the substrate lattice constant to the GaN layer lattice constant, thereby reducing dislocation defects while maintaining manufacturing feasibility
3Use of energy by moving object
If blue LED device is manufactured with high refractive index GaN-based semiconductor, then light conversion efficiency is improved, but light extraction efficiency is reduced due to total internal reflection
Solution Approach 1:
The patent introduces porous or textured structures on the LED device surface or substrate to create light scattering centers that disrupt total internal reflection. These porous structures increase the optical path length and extraction probability of generated photons without affecting the electrical performance or light conversion efficiency of the GaN-based semiconductor
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances light extraction efficiency and minimizes functional deterioration by preventing electrical short-circuits and optimizing the placement of nano-scale LED devices, enabling the use of nano-scale LEDs in various light sources, including surface and flexible light sources.
Implementation Method 1
an insulation film, which covers the whole outer surface of a portion of at least the active layer to prevent an electrical short-circuit occurring due to contact between the active layer of the nano-scale LED device and the electrode line
Implementation Method 2
a plurality of nano-scale LED devices connected to both of the first and second electrodes, wherein each of the nano-scale LED devices includes an insulation film
Implementation Method 3
a semiconductor device that converts an electrical signal into light having a wavelength band on a desired region to emit the light
Data Source
AI summary
Provided is an LED lamp using a nano-scale LED electrode assembly. The LED lamp using the nano-scale LED electrode assembly may solve limitations in which, when a nano-scale LED device according to the related art stands up and is three-dimensionally coupled to an electrode, it is difficult to allow the nano-scale LED device to stand up, and when the nano-scale LED devices are coupled to one-to-one correspond to electrodes different from each other, product quality is deteriorated. Thus, the nano-scale LED device having a nano unit may be connected to the two electrodes different from each other without causing defects, and light extraction efficiency may be improved due to the directivity of the nano-scale LED devices connected to the electrodes. Furthermore, deterioration in function of the LED lamp due to the defects of a portion of the nano-scale LEDs provided in the LED lamp may be minimized, and the LED lamp may have a flexible structure and shape by using the nano-scale LED electrode assembly of which a portion is deformable according to the used purpose or position of the LED lamp.