Nano Sensing Chip Selective Deposition via Localized Joule Heating

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Solution Overview

Problem

Conventional methods for modifying nanodevices for sensing applications face challenges in selective material deposition as devices scale down, leading to contamination and reduced sensitivity due to difficulties in precise material placement and repeated processing steps.

Innovation Solution

The method involves using localized Joule heating in conjunction with CVD or ALD to selectively deposit sensing materials on specific regions of nanodevices, allowing for sequential electrical-biasing to prevent contamination and simplify the manufacturing process, enabling the use of different sensing materials on individual nanodevices within a chip.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If shadow mask techniques are used to evaporate or sputter sensing materials, then material deposition can be achieved, but selective deposition on specific regions becomes difficult as devices scale down, leading to contamination outside the device channel

Engineering Contradiction:
Improveselective deposition precisionVSAvoidcontamination
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by creating localized Joule heating only at specific regions of the nanodevice channel through electrical biasing. This localized heating enables selective deposition of sensing materials only at the heated regions, ensuring precise spatial control and preventing contamination in non-target areas. The local thermal field acts as a spatial selector that maintains deposition precision even as devices scale down.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent replaces the mechanical shadow mask system with a field-based control mechanism. Instead of using physical masks to block deposition, the invention uses localized Joule heating fields to selectively activate deposition regions. This substitution eliminates the need for mechanical masking components and enables precise control through electrical biasing, achieving better spatial selectivity without mechanical constraints.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Adaptability or versatility

If lift-off techniques are used to deposit different materials on individual devices, then material selection flexibility is improved, but repeated coating, ablating, and lift-off processes cause contaminations or peeling of previously deposited materials, decreasing sensitivity

Engineering Contradiction:
Improvematerial selection flexibilityVSAvoidsensing sensitivity
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent applies preliminary action by pre-heating specific regions of the nanodevice channel through localized Joule heating before material deposition. This pre-heating creates a thermal gradient that directs sensing material deposition only to the heated regions, eliminating the need for subsequent lift-off or ablation steps. The preliminary thermal activation ensures that each material deposition is self-contained and does not interfere with previously deposited materials, maintaining both versatility and reliability.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent extracts and eliminates the harmful intermediate steps (coating, ablation, lift-off) from the conventional process sequence. By using localized Joule heating to directly control deposition locations, the invention removes the need for repeated processing cycles and intermediate manipulation steps that cause contamination or peeling. The process is simplified to direct selective deposition, preserving previously deposited materials while maintaining material selection flexibility.

Inventive Principle:
Principle #2Taking out (Extraction)

3Manufacturing precision

If conventional surface modification methods are used, then sensing material can be deposited, but the processes are complex and require repeated steps, increasing manufacturing complexity

Engineering Contradiction:
Improvematerial placement precisionVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent merges multiple process functions into a single localized Joule heating step. The electrical biasing simultaneously creates the thermal field for selective deposition and defines the deposition pattern, combining heating control and spatial selection into one operation. This merging eliminates the need for separate masking, coating, and patterning steps, reducing manufacturing complexity while maintaining precise material placement.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent employs self-service by using the nanodevice's own electrical conduction properties to generate localized heating for material deposition. The device structure itself serves as the heating element through Joule heating, eliminating the need for external heating apparatus or complex process equipment. This self-generated thermal field simplifies the manufacturing process while achieving precise spatial control of sensing material deposition.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the sensitivity and selectivity of nanoscale sensing devices by allowing precise material deposition, reducing power consumption, and enabling effective sensing of multiple gases under device Joule self-heating, improving the portability and efficiency of gas sensing applications.

Implementation Method 1

forming a nanodevice having a region capable of producing localized Joule heating; in a CVD system or an ALD system enabling the region of the nanodevice produce localized Joule heating

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Implementation Method 2

depositing a sensing material only on the region through localized Joule heating and the chemical vapor deposition (CVD)

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 3

depositing a sensing material only on the region through localized Joule heating and the chemical vapor deposition (CVD) or atomic layer deposition (ALD)

Methodology Applied
Scientific EffectAtomic layer deposition:

Data Source

PatentUS10985070B2Method for forming nano sensing chip by selective deposition of sensing materials through device-localized Joule heating and nano sensing chip thereof
Publication Date: 2021.04.20 NAT CHIAO TUNG UNIV
  • US10985070B2 patent drawing
  • US10985070B2 patent drawing
  • US10985070B2 patent drawing

AI summary

A method for forming a nanodevice sensing chip includes forming nanodevices having a sensing region capable of producing localized Joule heating. Individual nanodevice is electrical-biased in a chemical vapor deposition (CVD) system or an atomic layer deposition (ALD) system enabling the sensing region of the nanodevice produce localized Joule heating and depositing sensing material only on this sensing region. A sensing chip is formed via nanodevices with sensing region of each nanodevice deposited various materials separately. The sensing chip is also functioned under device Joule self-heating to interact and detect the specific molecules.