Nanocomposite Photodetector Reducing Dark Current via Buffer Layers

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Solution Overview

Problem

Conventional ultraviolet photodetectors face challenges in reducing dark current and enhancing signal-to-noise ratio, particularly when not illuminated by light, due to the conduction of electrons and holes through the device.

Innovation Solution

The photodetector design incorporates a nanocomposite active layer with nanoparticles such as ZnO blended with semiconducting polymers, along with buffer layers that block electron and hole conduction, transitioning from a rectifying Schottky contact in the dark to an ohmic contact under illumination, thereby reducing dark current and increasing responsivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional ultraviolet photodetectors are used, then they can detect ultraviolet light, but dark current is high and signal-to-noise ratio is low

Engineering Contradiction:
Improvedetection accuracyVSAvoiddark current
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The photodetector is segmented into multiple functional layers: anode, electron-blocking buffer layer, active layer with nanoparticles, hole-blocking buffer layer, and cathode. Each layer performs a specific function to control charge carrier transport, with the buffer layers specifically designed to block minority carriers and reduce dark current while maintaining UV detection capability

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The active layer uses a nanocomposite material combining semiconducting polymer (such as PVK or P3HT) with metal oxide nanoparticles (such as ZnO, TiO2, or SnO2). This composite structure leverages the wide bandgap of metal oxides for UV absorption and the semiconducting polymer for charge transport, achieving high detectivity while maintaining low dark current

Inventive Principle:
Principle #40Composite materials

2Object-generated harmful factors

If buffer layers are added to block electron and hole conduction, then dark current is reduced, but device complexity increases

Engineering Contradiction:
Improvedark currentVSAvoidlayer structure
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

Different buffer layers are positioned at specific locations within the device structure to address local transport issues. The electron-blocking layer is placed at the anode interface to prevent electron injection, while the hole-blocking layer is placed at the cathode interface to prevent hole injection. This localized approach reduces dark current without requiring complete structural redesign

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The buffer layers act as intermediary layers between the electrodes and the active layer. These intermediate layers with tailored energy levels facilitate selective charge blocking while maintaining good interface contact, reducing dark current without significantly complicating the overall device fabrication process

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration results in a high signal-to-noise ratio, low dark current, and high responsivity, with specific detectivities several orders of magnitude better than commercial GaN or SiC detectors, enabling effective detection of ultraviolet light.

Implementation Method 1

When the p-n junction of a photodiode is illuminated by light, photons excite electrons, causing free electrons and holes to be generated

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 2

Due to the built-in electric field at the depletion region, the free electrons move toward the cathode and the holes move toward the anode

Methodology Applied
Scientific EffectElectric Field: Electric Field

Implementation Method 3

the first buffer layer blocks conduction of electrons and the second buffer layer blocks conduction of holes to reduce a dark current through the photodetector

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Data Source

PatentUS9685567B2Nanocomposite photodetector
Publication Date: 2017.06.20 NUTECH VENTURES LTD
  • US9685567B2 patent drawing
  • US9685567B2 patent drawing
  • US9685567B2 patent drawing

AI summary

A photodetector includes an anode that is transparent or partially transparent to light, a cathode and an active layer disposed between the anode and the cathode. The active layer includes a nanocomposite material that has a polymer blended with nanoparticles or organic electron trapping particles. The photodetector has a low dark current when not illuminated by light and has a high conductivity when illuminated by light, in which the light passes the anode and is absorbed by the active layer.