Nanodisk LED Substrates for Multicolor Pixel Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current light emitting diode (LED) technologies face challenges in efficiently producing multicolor pixels on a single semiconductor substrate without stacking multiple substrates, which limits the color gamut and efficiency of display devices.
Innovation Solution
The development of light emitting devices using nanodisk-shaped pseudosubstrates with doped compound semiconductor layers, growth mask layers, and semiconductor nanostructures that include nanofrustums and pillar portions, allowing for the formation of active regions with optically active compound semiconductor layer stacks to emit light of different colors within a single pixel.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If multiple substrates are stacked to produce multicolor pixels, then color gamut is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent merges multiple color emission functions into a single substrate by forming different semiconductor nanostructure types (first, second, and third types with different bandgaps) on the same substrate. This allows red, green, and blue pixels to be produced simultaneously from one substrate rather than stacking multiple substrates, thereby improving color gamut while reducing device complexity.
Solution Approach 2:
The patent transitions from a vertical stacking approach (multiple substrates stacked in the vertical dimension) to a lateral differentiation approach (different nanostructure types arranged in the horizontal plane on a single substrate). This dimensional shift enables multicolor pixel production without increasing vertical device complexity.
2Illumination intensity
If multiple substrates are stacked to produce multicolor pixels, then color gamut is improved, but manufacturing efficiency decreases
Solution Approach 1:
The patent combines multiple color pixel fabrication processes into a single manufacturing flow on one substrate. By forming different semiconductor nanostructure types simultaneously through sequential epitaxial growth with varying parameters (temperature, pressure, gas flow rates), the process eliminates the need for separate substrate fabrication and stacking steps, thereby improving manufacturing efficiency while maintaining broad color gamut.
Solution Approach 2:
The patent creates a universal substrate that can produce multiple color pixels through different nanostructure types. The same substrate and basic fabrication process can generate red, green, and blue pixels by simply adjusting growth parameters, making the manufacturing process more versatile and efficient compared to dedicated single-color substrates that must be stacked.
3Ease of manufacture
If conventional LED structures are used, then manufacturing process is simple, but light emission efficiency is limited
Solution Approach 1:
The patent applies local quality by creating different semiconductor nanostructure types with specific properties in different regions of the substrate. Each nanostructure type (first, second, and third types) has tailored bandgap and emission characteristics optimized for specific color ranges, allowing high efficiency light emission across multiple colors while maintaining a relatively simple overall manufacturing process using standard epitaxial growth techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of multicolor pixels with improved light emission efficiency and color gamut, reducing the need for backlight units and liquid crystal materials, and allowing for direct view displays with enhanced illumination and color representation.
Implementation Method 1
each of the plurality of active regions includes a respective optically active compound semiconductor layer stack configured to emit light
Data Source
AI summary
A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.