Semiconductor Nanonet Fabrication via Deoxidation and Bonding
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Solution Overview
Problem
The production of semiconductor nanonets is limited by their low conductivity due to rapid oxidation of silicon and germanium nanowires in air, leading to electrical discontinuity and hindered application in electrical devices.
Innovation Solution
A method involving deoxidation of nanostructures followed by low-temperature annealing to strengthen bonds between nanostructures, preventing re-oxidation and ensuring electrical continuity without local melting, allowing for the formation of stable silicon or germanium nanonets with enhanced conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If semiconductor nanowires are assembled into nanonets in air, then the nanonets can be formed and handled, but the nanowires oxidize rapidly at junctions causing electrical discontinuity
Solution Approach 1:
The patent applies preliminary action by performing deoxidation treatment on the nanowires before they are fully assembled into the nanonet structure. This pre-treatment removes oxide layers from individual nanowires or partially assembled networks, preventing oxidation at junction points before electrical pathways are established, thereby ensuring reliable conductivity from the outset
Solution Approach 2:
The patent employs inert atmosphere by conducting the deoxidation and assembly processes in controlled environments with reduced oxygen presence. This inert environment prevents oxidation reactions at nanowire junctions during critical assembly and treatment stages, maintaining electrical continuity without requiring local melting or post-assembly deoxidation
2Reliability
If high-temperature processing is used to remove oxide layers, then electrical conductivity improves, but the nanostructures may melt or deform
Solution Approach 1:
The patent applies parameter changes by utilizing chemical etching agents (such as HF or NH4F solutions) that enable deoxidation at low temperatures. This chemical approach changes the deoxidation mechanism from thermal to chemical, allowing effective oxide removal without subjecting the nanostructures to melting or deformation temperatures, thus preserving structural integrity while achieving electrical continuity
Solution Approach 2:
The patent substitutes mechanical/thermal deoxidation methods with chemical deoxidation methods. Instead of using high-temperature thermal fields to remove oxide layers, the invention employs chemical etching agents that selectively dissolve oxide layers at ambient or low temperatures, replacing the thermal mechanism with a chemical one to avoid nanostructure damage
3Productivity
If direct growth of 3D nanonets is used, then nanonets can be formed, but large-scale integration is limited by complex and costly technological steps
Solution Approach 1:
The patent applies segmentation by dividing the nanonet formation process into separate stages: first assembling individual nanowires or small clusters, then progressively building up the full nanonet structure. This segmented approach simplifies each individual step, enabling better control and reducing the complexity of any single manufacturing operation compared to direct growth of complete 3D nanonets
Solution Approach 2:
The patent uses preliminary action by pre-assembling nanowires into partial structures or pre-treating individual nanowires with deoxidation before final network formation. This preliminary preparation simplifies the subsequent assembly steps and reduces the complexity of the overall manufacturing process by breaking down the complex direct growth into manageable preliminary and final stages
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly increases electrical conductivity in semiconductor nanonets, enabling them to maintain current over longer distances and remain stable in oxidizing environments, thus broadening their application in electronic devices.
Implementation Method 1
a method comprising a step of deoxidation of said at least one nanostructure
Implementation Method 2
followed by low-temperature annealing to strengthen bonds between nanostructures
Data Source
Figure 1a~1b
Figure 2a~2d
Figure 3a~3b
AI summary
The present invention relates to a method for producing a network of nanostructures (211) from at least one semiconductor material, comprising a step of forming the nanostructures on the surface of a substrate (210), at least part of the nanostructures having contact zones between them, characterized in that it comprises successively and after the formation step: a step of deoxidation of the surface of the nanostructures (220) and a step of strengthening the bond between nanostructures at the level of the contact zones (230).