Nanoparticle Photosensor Array for High-Resolution UV-IR Imaging
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Solution Overview
Problem
Existing UV and IR sensing imaging devices based on bulk semiconductor technologies face challenges such as high manufacturing costs, large pixel area, and relatively low resolution, making them unsuitable for mass production and integration into devices like smartphones.
Innovation Solution
The development of an imaging device using an array of photosensors with a film of semiconductor nanoparticles that can be excited by light in the 280 to 1500 nanometer range, featuring a filter to selectively transmit and block specific wavelengths, and a transistor level coupled to the electrodes, allowing for improved resolution and reduced surface area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If bulk semiconductor technologies are used for UV and IR sensing, then the devices can detect hidden details in UV and IR ranges, but the manufacturing cost increases and pixel area increases
Solution Approach 1:
The patent changes the material parameter from bulk semiconductor to semiconductor nanoparticles, which fundamentally alters the detection mechanism while enabling compatibility with standard CMOS manufacturing processes. This parameter change maintains UV and IR detection capability while reducing manufacturing complexity and cost.
Solution Approach 2:
The patent employs a composite structure combining semiconductor nanoparticles with standard CMOS circuitry and optical filters. This composite approach integrates the specialized sensing function with mass-producible semiconductor technology, achieving both detection performance and manufacturing efficiency.
2Measurement precision
If bulk semiconductor technologies are used for UV and IR sensing, then the devices can detect hidden details in UV and IR ranges, but the resolution decreases
Solution Approach 1:
The patent segments the sensing function into discrete nanoparticle units that can be arranged in high-density arrays. Each nanoparticle acts as an independent sensing element, enabling higher spatial resolution while maintaining the specialized UV and IR detection capability through the nanoparticle material properties.
3Measurement precision
If bulk semiconductor technologies are used for UV and IR sensing, then the devices can detect hidden details in UV and IR ranges, but the pixel area increases
Solution Approach 1:
The patent uses a thin film of semiconductor nanoparticles as the sensing layer, which can be deposited uniformly across the substrate. This thin-film approach dramatically reduces the vertical dimension of each pixel while maintaining detection functionality, thereby reducing overall pixel area and enabling higher pixel densities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the creation of high-resolution UV and IR sensing imaging devices with reduced surface area, compatible with mass production, suitable for integration into mobile devices like smartphones, while maintaining effective UV and IR light sensitivity.
Implementation Method 1
a film of semiconductor nanoparticles common to the photosensors of the array, the nanoparticles being able to be excited by light with wavelengths in the range from 280 to 1500 nanometers
Implementation Method 2
a first filter configured to transmit light with wavelengths in the range from 280 to 400 nanometers, and to at least partially filter out, and at least partially prevent from reaching the photosensor, light with wavelengths greater than 400 nanometers
Data Source
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AI summary
The present disclosure relates to an imaging device (100) comprising: - an array (102) of photosensors (104), the array (102) comprising a film (106) of semiconductor nanoparticles common to the photosensors (104) of the array (102), the nanoparticles being able to be excited by light with wavelengths in the range from 280 to 1500 nanometers, wherein: each photosensor comprises a top electrode (108) and a bottom electrode (110) positioned on opposite sides of the film (106) of semiconductor nanoparticles; and at least some of the photosensors (104) comprise a first filter configured to transmit light with wavelengths in the range from 280 to 400 nanometers, and to at least partially filter out, and at least partially prevent from reaching the photosensor, light with wavelengths greater than 400 nanometers; and - a transistor level (140) coupled to the top and bottom electrodes (108, 110) of the photosensors (104).