Radiation Controlled Devices TRIZ Cases

Combining silicon and germanium photodiodes with a beam-splitting optical path closes responsivity gaps for continuous UV-to-IR measurement.

Quantum dots extend silicon ToF photodetectors into the NIR range, enabling compact dual-wavelength depth sensing without costly cooled IR sensors.

A stepped housing wall exposes the sealing glue bead outward, venting outgassed species away from the cavity to keep the image sensor window clean.

Ridge-like anti-reflection structures and layered coatings suppress stray light between the cover element and microlens layer to preserve image quality.

Adjacent-pixel anode sharing and insulated via layout suppress parasitic capacitance noise while preserving aperture ratio in APD imaging.

Linking transistors switch pixel capacitance between read modes to balance dynamic range and charge-to-voltage sensitivity in image sensors.

Perpendicular AF pixel groups sharing one transmission control signal enable faster vertical and horizontal focus detection.

Sidewall spacers isolate non-silicon photodiodes during substrate extension growth, avoiding trench defects and widening usable wavelengths.

Displaced RRAM electrodes create a non-uniform electric field that localizes filament formation and reduces resistance and switching-voltage variation.

Segmented doped regions and reset control improve photodiode sensitivity, internal current gain, and sensing stability in optical links.

Angled silicon cavity walls support low-defect germanium growth, narrowing the active region to cut capacitance and raise optical data speed.

Pixel-level A/D conversion and staggered memory word-line layout cut analog noise and support faster high-resolution image processing.

A switchable pixel capacitance circuit adjusts imaging sensitivity by mode to widen dynamic range, improve SNR, and suppress leakage current.

A three-layer stack moves aluminum pads into the first substrate to avoid deep pad holes and block hot-carrier light noise.

A structured interface, side isolation layers, and a one-way filter trap IR light in small pixels to raise quantum efficiency and cut background noise.

A shifted top and bottom electrode layout creates a non-uniform electric field to guide filament formation and reduce RRAM switching variation.

Macro-pixel pinned photodiodes and switched-capacitor readout improve TOF distance resolution while lowering charge-transfer power.

A white-pixel-dominant array boosts low-light sensitivity, then switches to color readout to avoid saturation and preserve resolution.

Diagonal 2×2 groups combining primary and non-primary filters improve sharpness and color accuracy while reducing Bayer-style aliasing.

Structure-direction detection switches PDAF pixel output between interpolation and amplification to avoid shading-related image reconstruction errors.

Unequal photodiode junction areas let R, B, and Y/W channels saturate together, reducing signal waste in CMOS image sensors.

Deep trench isolation and a shared amorphous-silicon backside bias cut pixel crosstalk while preserving fill factor and PDE.

Different trench gate depths remove potential dips in a photoelectric converter, enabling smoother and more reliable charge transfer.

Parallel source follower regions and side ground connections cut thermal, flicker, and inter-pixel noise in dense image sensor pixels.

Light-trapping structures and reflective sidewalls extend the optical path in back-illuminated SPADs, boosting absorption without thicker silicon.

Stacking accumulation units in the pixel region raises capacitance without enlarging chip area, enabling parallel readout and higher frame rates.

A locally asymmetric fin and vertical-horizontal gate structure reduces noise and stabilizes electrical behavior in miniaturized image sensor pixels.

A spherical crown, dielectric layer, and reflector boost near-infrared absorption in a thin backside image sensor, improving signal quality.

Strategic glue lines, resin support, and elastic adhesive keep the microlens array and image sensor aligned despite thermal expansion.

A compliant stress reducing layer and dam structure limit thermal expansion stress on bonding wires, improving image sensor package reliability.

Shared readout in adjacent TOF pixels improves background light subtraction and preserves accuracy across a wider distance range.

A semiconductor nanoparticle film and wavelength filters enable compact high-resolution UV and IR imaging with lower pixel area and manufacturing cost.

Selective substrate removal forms a spacer that fixes optical filter gap width and parallelism, helping control etaloning in pixel sensors.