Nanorod LED Structure With Porous Layer for Light Extraction

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Solution Overview

Problem

Miniaturization of light emitting diodes (LEDs) to micro or nano units results in decreased luminous efficiency.

Innovation Solution

A nanorod light emitting device with a nano-scale diameter is developed, featuring a substrate structure with a porous semiconductor layer, a buffer layer, and a passivation film. The device includes a semiconductor light emitting structure with a nanorod shape, a first semiconductor layer doped with an impurity, a multi-quantum well light emitting layer, a second semiconductor layer with opposite conductivity type, and an electrode.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If LEDs are miniaturized to micro or nano units, then the size of the LED is reduced, but the luminous efficiency of the LED is lowered

Engineering Contradiction:
Improvesize of LEDVSAvoidluminous efficiency
Core Design Contradiction:
Volume of moving objectVSLoss of energy

Solution Approach 1:

The LED structure is segmented into multiple functional layers including a porous semiconductor layer with voids, a superlattice layer with alternating high and low bandgap materials, and a nanorod-shaped light emitting structure. This segmentation allows each layer to perform its specific function optimally, maintaining high luminous efficiency in the miniaturized device

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A porous semiconductor layer with controlled voids is introduced in the LED structure. The porous structure increases the surface area and improves light extraction efficiency while maintaining the compact nanoscale dimensions of the device, thereby preserving luminous efficiency despite miniaturization

Inventive Principle:
Principle #31Porous materials

Solution Approach 3:

The LED employs composite material structures including the superlattice layer composed of alternating InGaN and GaN layers with different bandgaps, and the combination of porous semiconductor material with nanorod structures. These composite materials enable optimized optical and electrical properties that maintain high efficiency in the miniaturized device

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The nanorod light emitting device achieves improved luminous efficiency while maintaining a nano-scale diameter, effectively addressing the efficiency loss encountered in miniaturized LEDs.

Implementation Method 1

a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids

Methodology Applied
Scientific EffectLight scattering: Scattering

Implementation Method 2

a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property

Methodology Applied
Scientific EffectElectrical insulation: Electrical Resistance

Implementation Method 3

a first semiconductor layer disposed on the porous semiconductor layer and doped with an impurity of a first conductivity type, a second semiconductor layer disposed on the light emitting layer and doped with an impurity of a second conductivity type

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20250185415A1Nanorod light emitting device, substrate structure including a plurality of nanorod light emitting devices, and method of manufacturing the substrate structure
Publication Date: 2025.06.05 SAMSUNG DISPLAY CO LTD
  • US20250185415A1 patent drawing
  • US20250185415A1 patent drawing
  • US20250185415A1 patent drawing

AI summary

Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.