Nanoscale Semiconductor Light Emitting Device with Inclined Insulating Layer Walls
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Solution Overview
Problem
Existing semiconductor light emitting devices face issues with leakage current and delamination due to differences in stress applied to the interior and exterior of openings in the insulating layer during the growth process, which affects the growth rate and quantum efficiency of nanoscale light emitting structures.
Innovation Solution
A semiconductor light emitting device is designed with a nanoscale light emitting structure that includes a first conductive semiconductor core, an active layer, and a second conductive semiconductor layer, where the inner side wall of the opening in the insulating layer is inclined at a predetermined angle, allowing the lower edge of the side portion of each nanoscale light emitting structure to contact the inner side wall, thereby reducing stress differences and preventing delamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the inner side wall of the opening is vertical, then the manufacturing process is simple, but stress differences cause delamination and leakage current
Solution Approach 1:
The opening's inner side wall is designed with an inclined surface rather than a vertical wall, creating an asymmetric geometry. This asymmetric structure distributes stress more evenly during the growth process, preventing delamination between the insulating layer and nanoscale light emitting structures, thereby resolving the contradiction between manufacturing simplicity and device reliability.
2Reliability
If the inner side wall is inclined at a predetermined angle, then delamination is prevented, but the manufacturing precision requirement increases
Solution Approach 1:
The opening angle is optimized to a specific range (greater than 15 degrees and less than 75 degrees relative to the substrate surface). This parameter optimization achieves effective stress distribution and delamination prevention while maintaining feasibility for conventional manufacturing processes, balancing reliability improvement with manufacturing precision requirements.
3Loss of energy
If nanoscale light emitting structures are formed in openings, then light emission efficiency is improved, but leakage current occurs due to stress differences
Solution Approach 1:
The inclined inner side wall creates an asymmetric stress distribution environment that prevents delamination. This asymmetric geometry ensures uniform stress application during nanoscale light emitting structure growth, eliminating the stress differences that cause leakage current, thereby maintaining high light emission efficiency without harmful leakage effects.
4Reliability
If the opening cross sectional area is gradually increased upward, then stress is uniformly distributed, but the opening geometry becomes complex
Solution Approach 1:
The opening is designed with an inclined inner side wall that gradually increases the cross-sectional area upward. This asymmetric tapered geometry achieves uniform stress distribution during the growth process while maintaining a relatively simple conical or frustoconical shape that can be manufactured using standard photolithography and etching techniques.
Data Source
AI summary
A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer.