Nanosheet Gate Bridge Structure for Precise Electrode Alignment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in effectively patterning the gate structure, leading to inefficiencies and inconsistencies in the manufacturing process.
Innovation Solution
The introduction of a gate pattern bridge that overlaps the boundary between first and second gate electrodes, formed from materials like silicon nitride or silicon oxycarbonitride, which contacts the field insulating layer and the gate electrodes, ensuring consistent positioning and protection during manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a gate pattern bridge is introduced to improve gate electrode alignment, then manufacturing precision is improved, but device structure becomes more complex
Solution Approach 1:
A gate pattern bridge is introduced as an intermediary structure between adjacent gate electrodes. This bridge, formed from the filling material deposited in the etching area, serves as a reference marker that facilitates precise alignment during subsequent manufacturing steps. The bridge mediates the positioning relationship between gate electrodes, enabling better control of their relative positions without requiring complex direct alignment mechanisms.
Solution Approach 2:
The gate pattern bridge is formed in advance during the filling process, before the gate electrodes are fully defined. By establishing the bridge structure preliminarily as part of the filling material, the alignment reference is available early in the manufacturing sequence, enabling subsequent steps to reference this pre-established feature rather than requiring complex real-time alignment procedures.
2Stability of the object's composition
If the gate pattern bridge contacts the field insulating layer, then structural stability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The gate pattern bridge is merged with the field insulating layer through direct contact. The bridge is positioned to touch the field insulating layer, combining these two structures into a stable integrated configuration. This merging provides mechanical support and stabilizes the gate structure, while the field insulating layer serves as a stable reference plane that simplifies positioning requirements compared to floating structures.
Data Source
AI summary
A semiconductor device may include: a field insulating layer; a first gate electrode disposed on the field insulating layer; a plurality of first nanosheets disposed in the first gate electrode; a second gate electrode disposed on the field insulating layer and forming a boundary with the first gate electrode; a plurality of second nanosheets disposed in the second gate electrode; and a gate pattern bridge disposed between the first gate electrode and the second gate electrode and contacting the boundary.