Nanosheet Metal Gate Cut Structure for RMG Integration
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Solution Overview
Problem
As integrated circuit devices become more integrated, the challenge of improving device performance while maintaining structural integrity and reducing size is exacerbated, particularly in replacing polysilicon gates with metal gates during the replacement metal gate (RMG) process.
Innovation Solution
The integration of a metal gate structure with a gate cut structure having a tapered shape that decreases in horizontal width from the lower side to the upper side in the vertical direction, allowing for increased integration and self-aligned formation without damaging surrounding components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the degree of integration is increased, then device performance is improved, but structural integrity and size reduction become more difficult to maintain
Solution Approach 1:
The gate electrode is segmented into multiple sections by the gate cut structure, which divides the continuous gate electrode into discrete segments. This segmentation allows for better control of each gate section, improving device performance while maintaining structural integrity through the insulating material that separates the segments.
Solution Approach 2:
An insulating material is introduced as an intermediary substance within the gate electrode structure. This insulating material forms the gate cut structure that separates gate electrode sections, enabling improved device performance while maintaining structural integrity by preventing electrical interference between adjacent gate sections.
2Productivity
If polysilicon gates are replaced with metal gates, then device performance is improved, but the complexity of the replacement process increases
Solution Approach 1:
The gate cut structure is formed preliminarily within the gate electrode before the metal gate formation process is completed. This preliminary action simplifies the overall replacement process by pre-defining the gate sections, making the metal gate formation more straightforward and reducing process complexity.
Solution Approach 2:
The gate cut structure serves a dual function: it acts as both an insulating barrier and a defining structure for the metal gate sections. This self-service approach reduces the need for additional separate structures or processes, simplifying the replacement metal gate process while maintaining improved device performance.
3Manufacturing precision
If the gate cut structure has a tapered shape, then manufacturing precision is improved, but the horizontal width reduction may affect gate electrode functionality
Solution Approach 1:
The gate cut structure exhibits local quality variation through its tapered shape, with different horizontal widths at different vertical positions. This localized variation improves manufacturing precision by providing better etch control and structure definition, while the overall gate electrode functionality is maintained through appropriate dimensional design.
Solution Approach 2:
The gate cut structure utilizes the vertical dimension to achieve its function, with the tapered shape varying horizontal width along the vertical axis. This dimensional approach allows manufacturing precision to be improved in the horizontal plane through vertical profiling, while the gate electrode's horizontal functionality is preserved through proper spacing and dimensional design.
Data Source
AI summary
A method of manufacturing an integrated circuit device includes forming a plurality of nanosheet stacked structures on a substrate; forming a gate cut hole; forming a gate cut structure filling the gate cut hole; sequentially forming a substrate insulating layer and a lower wiring structure on the gate cut structure, a plurality of gate spacers, and a lower surface of a plurality of fin-type active areas; and forming an upper wiring structure on an interlayer insulating layer.