Nanostructure Gate Dielectric Segmentation for Vt and Mobility Tuning
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, challenges arise in achieving both desired threshold voltages and improved device mobility due to interference between dipole elements and fluorine atoms in the gate dielectric layer.
Innovation Solution
A two-step process is employed to introduce dipole elements and fluorine atoms into the gate dielectric layer, reducing overlapping regions and allowing for independent tuning of threshold voltages and mobility improvements in semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dipole elements and fluorine atoms are introduced into the gate dielectric layer simultaneously, then both threshold voltage tuning and mobility improvement are achieved, but interference between the two elements degrades device performance
Solution Approach 1:
The gate dielectric layer is divided into multiple regions with different compositions. A first region contains dipole elements for threshold voltage tuning, while a second region contains fluorine atoms for mobility improvement. This spatial segmentation eliminates interference between the two elements while maintaining both functions in the same device.
Solution Approach 2:
Different regions of the gate dielectric layer are assigned different local compositions and functions. The first region is optimized for threshold voltage control through dipole elements, while the second region is optimized for carrier mobility through fluorine atoms. Each region maintains its specialized function without interference from the other.
2Productivity
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but additional manufacturing and performance problems arise
Solution Approach 1:
The gate dielectric layer is segmented into functionally distinct regions that can be independently optimized. This allows simultaneous achievement of threshold voltage tuning and mobility improvement without requiring further miniaturization, thereby increasing integration density while avoiding the complexities associated with smaller feature sizes.
Solution Approach 2:
The gate dielectric layer uses a composite structure with different material compositions in different regions. This composite approach enables multiple functions (threshold voltage control and mobility enhancement) to be achieved within the same layer without reducing feature size, thus avoiding the manufacturing and performance challenges associated with miniaturization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces interference between dipole elements and fluorine atoms, enabling both desired threshold voltages and enhanced device mobility in semiconductor devices.
Implementation Method 1
a first region of the gate dielectric layer comprises dipole elements
Implementation Method 2
a second region of the gate dielectric layer comprises fluorine atoms
Data Source
AI summary
A method of forming a semiconductor device includes forming a first dielectric layer over a first channel region in a first region and over a second channel region in a second region; introducing a first dipole element into the first dielectric layer in the first region to form a first dipole-containing gate dielectric layer in the first region; forming a second dielectric layer over the first dipole-containing gate dielectric layer; introducing fluorine into the second dielectric layer to form a first fluorine-containing gate dielectric layer over the first dipole-containing gate dielectric layer; and forming a gate electrode over the first fluorine-containing gate dielectric layer.