Nanostructure Transistor Isolation for Source/Drain Leakage Control
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Solution Overview
Problem
As integrated circuits scale, the proximity of conductive features increases the risk of undesired leakage currents and short circuits due to reduced distance, leading to poorly functioning circuits and decreased yields.
Innovation Solution
The implementation of nanostructure transistors with bottom dielectric barrier structures and fin sidewall spacers to reduce source/drain leakage currents and prevent bridging between adjacent source/drain regions, utilizing techniques such as double-patterning processes and epitaxial growth to control lateral growth and isolate gate electrodes from source/drain regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If scaling continues to increase transistor density, then computing power increases, but leakage currents and short circuits between nearby features increase
Solution Approach 1:
The patent introduces dielectric barrier structures as intermediary elements positioned between adjacent source/drain regions. These barrier structures act as mediators that physically block and prevent direct electrical contact, thereby eliminating leakage currents and potential short circuits while allowing the scaled-down transistor design to maintain its high density and computing power.
Solution Approach 2:
The patent segments the continuous source/drain regions by inserting discrete dielectric barrier structures between them. This segmentation divides what would otherwise be a continuous conductive path into separate, isolated regions, preventing unwanted current flow while preserving the functional integrity of each transistor in the scaled design.
2Productivity
If scaling continues to increase transistor density, then computing power increases, but short circuits between nearby features increase
Solution Approach 1:
The dielectric barrier structures serve as intermediary elements that physically separate adjacent source/drain regions. By positioning these insulating barriers between closely spaced conductive features, the patent prevents direct electrical contact that would cause short circuits, thereby enabling continued scaling without compromising circuit reliability.
Solution Approach 2:
The patent converts the potentially harmful effect of close spacing (which causes short circuits) into a benefit by using the same close spacing to position dielectric barriers effectively. The close proximity of source/drain regions that would normally cause shorting is instead used to strategically place insulating barriers that prevent the harmful effect while maintaining the high-density layout.
3Reliability
If bottom dielectric barrier structures and fin sidewall spacers are integrated to reduce leakage currents, then reliability improves, but device complexity increases
Solution Approach 1:
The patent merges the formation of dielectric barrier structures and fin sidewall spacers into a single integrated process flow. By combining these two isolation mechanisms into one unified implementation approach, the patent achieves comprehensive leakage current reduction while minimizing the increase in device complexity that would result from adding separate, independent process steps.
Solution Approach 2:
The dielectric barrier structures serve multiple functions simultaneously: they act as bottom isolation regions to prevent substrate leakage, as spacers to define source/drain regions, and as structural elements that maintain fin geometry. This multi-functionality reduces the need for separate dedicated structures, thereby improving reliability without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces power consumption and heat generation, enhances transistor functionality, and increases wafer yields by minimizing leakage currents and bridging between source/drain regions.
Implementation Method 1
a first dielectric barrier structure positioned below the source/drain region and electrically isolating the source/drain region from the substrate
Implementation Method 2
utilizing techniques such as double-patterning processes and epitaxial growth to control lateral growth
Data Source
AI summary
An integrated circuit includes a nanostructure transistor including a plurality of first semiconductor nanostructures over a substrate and a source/drain region in contact with each of the semiconductor nanostructures. The integrated circuit includes a fin sidewall spacer laterally bounding a lower portion of the source/drain region. The integrated circuit also includes a bottom isolation structure electrically isolating the source/drain region from the semiconductor substrate.