Nano-structured Light-emitting Devices with Resistant Layers
Solution Overview
Problem
Nano-structured light-emitting devices face reliability issues due to current concentration on individual nanostructures, leading to potential damage and reduced electrical reliability.
Innovation Solution
The implementation of resistant layers with higher resistance values than the nanostructures, connected in series and parallel to distribute current evenly across multiple nanostructures, along with an insulating layer to prevent current concentration and enhance reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If current is concentrated onto individual nanostructures to achieve high light emission intensity, then light emission efficiency is improved, but reliability deteriorates due to potential damage to nanostructures
Solution Approach 1:
The device segments the current path by introducing resistant layers between individual nanostructures. Each nanostructure is isolated with its own resistant layer, preventing current from concentrating on a single nanostructure while still allowing current to flow through multiple nanostructures in parallel, thus distributing the electrical stress and improving reliability
Solution Approach 2:
Resistant layers are introduced as intermediary elements between the electrode and nanostructures. These resistant layers have higher resistance than the nanostructures themselves, acting as current-regulating mediators that distribute current uniformly across multiple nanostructures, preventing current concentration while maintaining overall light emission efficiency
2Reliability
If resistant layers with higher resistance values are introduced to distribute current evenly, then reliability is improved, but device complexity increases
Solution Approach 1:
Multiple nanostructures are merged into a single functional unit by connecting them through common electrode layers and resistant layers. The resistant layers are merged with the electrode structure to form an integrated current distribution network, simplifying the overall design while achieving current uniformity across multiple nanostructures
Solution Approach 2:
The resistance parameter of the resistant layers is specifically designed to be higher than that of the nanostructures. This parameter change enables the resistant layers to act as current-regulating elements without requiring complex control circuits, achieving reliable current distribution through simple passive component design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces the risk of damage to individual nanostructures by distributing current uniformly, thereby improving the electrical reliability and light emission efficiency of the nano-structured light-emitting devices.
Implementation Method 1
a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures... The resistant layers may have resistance values that are greater than or equal to resistance values of the nanostructures
Implementation Method 2
A semiconductor light-emitting device such as a light-emitting diode (LED) or a laser diode (LD) uses an electroluminescence phenomenon, i.e., a phenomenon of emitting light from a material through an application of a current or a voltage
Implementation Method 3
a reflective layer which reflects light emitted from the active layers
Data Source
AI summary
Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures.