Carbon Nanotube Stack Thinning for Aligned Transistor Channels

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Solution Overview

Problem

As semiconductor manufacturing continues to shrink feature sizes, challenges arise in integrating and aligning carbon nanotubes for high-density, pure layers in semiconductor devices, requiring efficient deposition and alignment methods to enhance integration density and device performance.

Innovation Solution

A vacuum system with a filter and electrostatic field is used to deposit and align carbon nanotubes, employing a filter membrane with a pore diameter smaller than the nanotubes and a surfactant to generate an electrostatic field, allowing for precise alignment and high-purity layer formation, followed by controlled thinning processes to achieve the desired nanotube density and layer thickness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional lithography and deposition methods are used to shrink feature sizes, then integration density improves, but manufacturing precision and alignment quality deteriorate

Engineering Contradiction:

Improveintegration densityVSAvoidalignment quality

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent replaces conventional mechanical lithography and deposition systems with a biological self-assembly system. DNA-functionalized nanotubes spontaneously organize into aligned arrays through molecular recognition and self-assembly mechanisms, eliminating the need for complex lithographic patterning and mechanical alignment processes while achieving superior precision at the nanoscale

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The nanotube arrays perform self-alignment and self-organization through DNA-mediated molecular recognition. The functionalized nanotubes automatically position themselves in ordered arrays without external intervention or complex manufacturing steps, enabling high integration density while maintaining exceptional alignment quality

Inventive Principle:

Principle #25Self-service

2Productivity

If feature size is reduced to increase integration density, then more components fit in given area, but manufacturing complexity and difficulty increase

Engineering Contradiction:

Improveintegration densityVSAvoidmanufacturing complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The system utilizes self-assembly of DNA-functionalized nanotubes that automatically organize into ordered arrays through molecular recognition. This self-organizing behavior eliminates complex manufacturing steps, alignment procedures, and patterning processes, dramatically simplifying the fabrication workflow while achieving high integration density

Inventive Principle:

Principle #25Self-service

Solution Approach 2:

DNA functionalization serves as an intermediary mechanism that mediates the self-organization of nanotubes. The DNA coatings on nanotube surfaces enable molecular recognition and directed self-assembly, transforming a complex manufacturing challenge into a simple self-organizing process that occurs spontaneously under controlled conditions

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method achieves a high-density, extremely pure layer of aligned carbon nanotubes with precise control over spacing and thickness, improving semiconductor device integration and performance beyond the 2 nm node by ensuring efficient alignment and removal of damaged nanotubes, thereby increasing yield and efficiency.

Implementation Method 1

a filter membrane with a first electrostatic field during the filtering the individual nanotubes

Methodology Applied

Scientific EffectElectrostatic field: Electrostatics

Implementation Method 2

filtering a carbon nanotube solution through a filter membrane

Methodology Applied

Scientific EffectFiltering: Filter (physical)

Implementation Method 3

a surfactant to generate an electrostatic field, allowing for precise alignment

Methodology Applied

Scientific EffectElectrostatic field generation by surfactant: Electrostatics

Implementation Method 4

a surfactant to generate an electrostatic field

Methodology Applied

Scientific EffectSurfactant: Surfactant

Implementation Method 5

A vacuum system with a filter and electrostatic field is used to deposit and align carbon nanotubes

Methodology Applied

Scientific EffectVacuum deposition: Vacuum

Data Source

PatentUS12151213B2Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes

Publication Date: 2024.11.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.