Nanowire IGBT Drift Region Segmentation for Low On-State Resistance
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Solution Overview
Problem
Semiconductor devices face high power loss and reduced durability due to high on-state resistance, which can lead to latch-up and decreased life cycle.
Innovation Solution
The implementation of nanowire structures with corresponding gate structures in insulated gate bipolar transistor (IGBT) devices, allowing for unipolar current flow and reduced on-state resistance, thereby minimizing latch-up and enhancing durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional IGBT structures are used, then device simplicity is maintained, but on-state resistance remains high causing power loss
Solution Approach 1:
The drift region is segmented into multiple regions with different doping concentrations arranged in an alternating pattern. This segmentation creates multiple parallel conduction paths with different resistance characteristics, reducing the overall on-state resistance while maintaining a manageable structural complexity through periodic repetition of the pattern.
Solution Approach 2:
Different regions of the drift region are assigned different doping concentrations to optimize local electrical properties. Highly doped regions provide low-resistance conduction paths while lightly doped regions maintain high breakdown voltage, achieving both low on-state resistance and high voltage blocking capability in different locations within the device.
2Loss of energy
If doping concentration in drift region is increased to reduce on-state resistance, then power loss decreases, but breakdown voltage capability is reduced
Solution Approach 1:
The drift region is divided into alternating highly doped and lightly doped segments. The highly doped segments provide low-resistance conduction paths that reduce on-state power loss, while the lightly doped segments maintain the high electric field breakdown capability necessary for high voltage operation, thus resolving the trade-off between conduction and breakdown performance.
Solution Approach 2:
Different doping concentrations are applied to different spatial regions of the drift region. The highly doped regions locally reduce series resistance to minimize conduction losses, while the lightly doped regions locally maintain high breakdown voltage capability, achieving both low power loss and high reliability simultaneously through spatial differentiation of material properties.
Data Source
AI summary
A transistor device includes a first silicon nanowire array-MOSFET and a second silicon nanowire array-MOSFET integrated with a bulk drift region. The first silicon nanowire array-MOSFET is configured as an n-MOSFET by substantially only accommodating an electron current, and the second silicon nanowire array-MOSFET is configured as a p-MOSFET by substantially only accommodating a hole electron current. A current strength of a current through the first silicon nanowire array-MOSFET caused by electrons is at least 10 times larger than a current through the first silicon nanowire array-MOSFET caused by holes in an on-state of the transistor device. Further embodiments of transistor devices are described.