Self-Aligned Nanowire LED Subpixels for Direct View Displays
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Solution Overview
Problem
Current light emitting devices, such as LEDs, in electronic displays face challenges in achieving efficient multicolor emission without the need for backlights or liquid crystals, and existing methods for forming LEDs with different peak wavelengths on a single substrate are complex and costly.
Innovation Solution
The method involves forming clusters of semiconductor nanostructures with a core of one conductivity type and an active shell, separated by inter-cluster regions, and selectively depositing a second conductivity type semiconductor material layer within the clusters to create nanowire-based LEDs that emit different colors, allowing for direct view displays without the need for backlights or liquid crystals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If existing methods are used to form LEDs with different peak wavelengths on a single substrate, then multicolor emission is achieved, but the fabrication process becomes complex and costly
Solution Approach 1:
The substrate is divided into multiple clusters, each containing semiconductor nanostructures with different peak wavelengths. This segmentation allows different colors to be formed in separate regions, enabling multicolor emission while simplifying the overall fabrication process by avoiding complex multi-step patterning procedures.
Solution Approach 2:
Different regions (clusters) of the substrate are given different local properties by forming semiconductor nanostructures with specific peak wavelengths in each cluster. This local differentiation enables multicolor emission without requiring complex global process control, as each cluster can be optimized independently for its intended color output.
2Adaptability or versatility
If existing methods are used to form LEDs with different peak wavelengths on a single substrate, then multicolor emission is achieved, but manufacturing cost increases
Solution Approach 1:
The substrate is divided into multiple clusters, each containing semiconductor nanostructures with different peak wavelengths. This segmentation allows different colors to be formed in separate regions, enabling multicolor emission while simplifying the overall fabrication process by avoiding complex multi-step patterning procedures.
Solution Approach 2:
Different regions (clusters) of the substrate are given different local properties by forming semiconductor nanostructures with specific peak wavelengths in each cluster. This local differentiation enables multicolor emission without requiring complex global process control, as each cluster can be optimized independently for its intended color output.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of efficient, multicolor light emitting diodes that can be integrated into direct view displays, providing improved illumination and color gamut without the requirement for additional light sources or materials, simplifying the fabrication process and reducing costs.
Implementation Method 1
selectively depositing a second conductivity type semiconductor material layer having a doping of a second conductivity type on the clusters of semiconductor nanostructures
Implementation Method 2
nanowire-based LEDs that emit different colors
Data Source
AI summary
A light emitting device, such as an LED, is formed by forming clusters of semiconductor nanostructures separated by inter-cluster regions that lack semiconductor nanostructures over a substrate, where each semiconductor nanostructure includes a nanostructure core having a doping of a first conductivity type and an active shell formed around the nanostructure core, and selectively depositing a second conductivity type semiconductor material layer having a doping of a second conductivity type on the clusters of semiconductor nanostructures. Portions of the selectively deposited second conductivity type semiconductor material layer form a continuous material layer in each cluster of semiconductor nanostructures, and the second conductivity type semiconductor material layer is not deposited in the inter-cluster regions.


