Nanowire Memory Device Using Magnetic Vortex Nucleation

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Solution Overview

Problem

Current two-dimensional memory devices have reached theoretical density limits, necessitating a shift to three-dimensional storage solutions to increase memory capacity, while also requiring minimal power consumption and efficient semiconductor technology for mass adaptation.

Innovation Solution

A method involving a substrate with a nucleation pad and a nanowire, where a charge current is used to nucleate a magnetic vortex, and a shift current is applied to move the magnetic domain from the nucleation pad into the nanowire segment, utilizing the spin Hall effect and spin transfer torque to switch and shift magnetic domains between 0 and 1.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If two-dimensional memory device architecture is used, then device simplicity is maintained, but memory density reaches theoretical limit

Engineering Contradiction:

Improvedevice architecture simplicityVSAvoidmemory density

Core Design Contradiction:

Device complexityVSQuantity of substance

Solution Approach 1:

The patent transitions from two-dimensional planar memory cells to three-dimensional vertical nanowire structures. Multiple nanowire segments are stacked vertically along the z-axis, with magnetic domains positioned at different heights to represent multiple bits per cell. This dimensional transition enables significantly higher storage density while maintaining semiconductor fabrication compatibility.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If magnetic domain switching is implemented for storage, then memory capacity increases, but power consumption increases

Engineering Contradiction:

Improvememory capacityVSAvoidpower consumption

Core Design Contradiction:

Quantity of substanceVSUse of energy by moving object

Solution Approach 1:

The patent replaces traditional mechanical or high-power magnetic field-based domain switching with spin transfer torque (STT) mechanism. Current flowing through the substrate generates spin-polarized electrons that exert torque on the magnetic domains in the nanowire segments, enabling low-power switching. This substitution of the switching mechanism dramatically reduces power consumption while maintaining high storage capacity.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Quantity of substance

If three-dimensional nanowire structure is implemented, then memory density increases, but manufacturing complexity increases

Engineering Contradiction:

Improvememory densityVSAvoidmanufacturing complexity

Core Design Contradiction:

Quantity of substanceVSEase of manufacture

Solution Approach 1:

The patent divides the three-dimensional storage space into discrete nanowire segments along the vertical axis. Each segment contains magnetic domains that can be independently controlled and addressed. This segmentation allows complex 3D structures to be manufactured using sequential deposition and patterning steps that are compatible with existing semiconductor fabrication processes, reducing overall manufacturing complexity.

Inventive Principle:

Principle #1Segmentation

4Manufacturing precision

If magnetic vortex nucleation is used for domain switching, then switching precision improves, but control complexity increases

Engineering Contradiction:

Improvedomain switching precisionVSAvoidcontrol mechanism complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent introduces a nucleation pad as an intermediary layer between the substrate and the nanowire segments. This nucleation pad facilitates controlled magnetic vortex formation and domain nucleation through spin Hall effect when current passes through the substrate. The intermediary structure simplifies the control mechanism by providing a dedicated region for magnetic state initialization, improving switching precision without significantly increasing overall device complexity.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables increased memory density by effectively utilizing the third dimension and reducing power consumption through the selective switching and shifting of magnetic domains within nanowire segments, enhancing the storage capacity and efficiency of memory devices.

Implementation Method 1

utilizing the spin Hall effect and spin transfer torque to switch and shift magnetic domains

Methodology Applied

Scientific EffectSpin Hall effect: Hall Effect

Implementation Method 2

utilizing the spin Hall effect and spin transfer torque to switch and shift magnetic domains between 0 and 1

Methodology Applied

Scientific EffectSpin transfer torque:

Data Source

PatentUS11967350B1System and method for current controlled nanowire memory device

Publication Date: 2024.04.23 CEREMORPHIC INC

AI summary

A system and method for a memory device is disclosed. A substrate is provided. A nucleation pad is disposed over the substrate. A nanowire is disposed substantially perpendicular, about a center of the nucleation pad. A charge current is selectively passed through the substrate to nucleate a magnetic vortex in the nucleation pad, the magnetic vortex indicative of a magnetic domain and a direction of the magnetic vortex indicative of a polarity of the magnetic domain. A shift current is applied through the nanowire to shift the magnetic domain into the nanowire.