Nanowire Transfer via Alignment Marks
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Solution Overview
Problem
Current nanowire device manufacturing methods face challenges such as low yield, high production costs, and difficulty in accurately positioning nanowires due to complex alignment processes and the need for expensive equipment like e-beam lithography, as well as limitations in achieving uniform nanowire dimensions and quality, especially when using SOI substrates.
Innovation Solution
A method involving the formation of thermal oxide layers, dry and wet etching processes, and reactive ion etching to create supporting structures and transfer silicon nanowires to another substrate without additional alignment processes, allowing for precise placement and minimizing stress, thereby enabling mass production of nanowire devices with desired dimensions and shapes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If e-beam lithography is used to form ultra fine patterns for nanowire devices, then manufacturing precision is improved, but device complexity and production cost increase
Solution Approach 1:
The manufacturing process is divided into distinct stages: nanowire growth on a first substrate, pattern formation for alignment marks, and transfer to a second substrate. This segmentation allows each stage to be optimized independently, avoiding the need for e-beam lithography in the final device fabrication while maintaining precise positioning through the alignment mark transfer mechanism.
Solution Approach 2:
Alignment marks are introduced as intermediary elements that facilitate precise positioning without requiring direct e-beam lithography of the nanowires themselves. The alignment marks serve as mediators between the nanowire growth process and the final device assembly, enabling accurate placement through simpler lithography methods.
2Ease of manufacture
If VLS growing method is used to synthesize nanowires, then manufacturing cost is reduced, but positioning precision deteriorates
Solution Approach 1:
Alignment marks are formed on the first substrate before nanowire growth, establishing a predetermined positioning framework in advance. This preliminary action enables the VLS-grown nanowires to be accurately positioned relative to the substrate features without requiring complex real-time control during the growth process itself.
Solution Approach 2:
The alignment mark pattern from the first substrate is effectively copied to the second substrate during the transfer process. This copying mechanism preserves the precise positioning information through the transfer, allowing VLS-grown nanowires to achieve accurate placement on the final substrate without requiring expensive e-beam lithography.
3Reliability
If additional electrode structures are manufactured after nanowire alignment, then electrical functionality is achieved, but productivity deteriorates
Solution Approach 1:
The electrode structure formation process is merged with the nanowire transfer process. By forming electrodes on the second substrate before or during the nanowire transfer, rather than as a separate subsequent step, the overall process time is reduced and productivity is improved while maintaining reliable electrical contacts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the cost-effective mass production of nanowire devices with precise positioning and reduced stress, improving yield and integration, and allowing for various nanowire shapes without being constrained by crystal directions, while eliminating the need for SOI substrates.
Implementation Method 1
forming a first thermal oxide layer on a semiconductor substrate
Implementation Method 2
manufactures the nanowire device by aligning the nanowire to a specific position
Data Source
AI summary
The present invention provides a method for manufacturing a semiconductor nanowire device in mass production at a low cost without an additional complex nanowire alignment process or SOI substrate by forming a single crystal silicon nanowire with a simple process without forming an ultra fine pattern using an electron beam and transferring the nanowire separated from the substrate to another oxidation layer or insulation substrate. And also, the present invention suggests a method for simply manufacturing a nanowire device transferring the nanowire from a semiconductor substrate formed thereon the nanowire to another substrate formed thereon an insulation layer or the like.