Nanowire Trimming via Selective Doping Diffusion and Etching
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Solution Overview
Problem
Current methods for trimming nanowire structures in semiconductor devices, such as dry and wet etching, result in non-uniform size reduction, making it difficult to reliably and efficiently produce uniform small nanowire features essential for advanced semiconductor devices.
Innovation Solution
A method involving a doping diffusion process to form an N-type doped region in the nanowire structure, followed by an etching process that selectively removes the doped region, allowing for precise reduction of the nanowire size while maintaining uniform cross-sectional configuration, with the doping process performed at temperatures between 600-1100°C and dopant concentrations of 1019-1021 atoms/cm3.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If dry and wet etching methods are used to trim nanowire structures, then size reduction can be achieved, but the cross-sectional uniformity deteriorates
Solution Approach 1:
The patent applies preliminary doping diffusion to the nanowire structures before etching. By forming a doped region that extends partially along the length of the nanowire structures, the etching process is pre-conditioned to be selective. This preliminary action ensures that when etching occurs, it uniformly removes material from all nanowire cross-sections while preserving the desired final dimensions and cross-sectional uniformity.
Solution Approach 2:
The patent introduces local quality by creating a doped region with specific electrical and chemical properties that differ from the undoped regions. This doped region serves as a selective marker that responds differently to the etching process. The local modification of material properties through doping enables the etching to distinguish between regions that should be removed and regions that should be preserved, thereby maintaining cross-sectional uniformity during size reduction.
2Productivity
If nanowire structures are reduced to small sizes, then device density and performance improve, but leakage currents increase
Solution Approach 1:
The patent changes the electrical and chemical parameters of the nanowire structures through doping diffusion. By introducing dopant atoms into the semiconductor material, the electrical conductivity and chemical reactivity of the nanowire regions are modified. This parameter change enables precise control over which regions are etched away and which are preserved, allowing for optimized final dimensions that balance device density with leakage current suppression.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and controlled size reduction of nanowire structures, achieving final cross-sectional sizes 20-80% smaller than initial sizes with uniform configurations, thereby improving the manufacturing of advanced semiconductor devices by reducing leakage currents and enhancing device performance.
Implementation Method 1
performing a doping diffusion process to form an N-type doped region in the initial nanowire structure
Implementation Method 2
performing an etching process to remove at least a portion of the doped region and thereby define a final nanowire structure
Data Source
AI summary
One illustrative method disclosed herein includes forming an initial nanowire structure having an initial cross-sectional size, performing a doping diffusion process to form an N-type doped region in the initial nanowire structure and performing an etching process to remove at least a portion of the doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein the final cross-sectional size is smaller than the initial cross-sectional size.