Negative Photoresist Composition with Reverse Taper Profile
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Solution Overview
Problem
Conventional negative photoresist compositions fail to produce high-sensitivity patterns with reverse taper profiles, leading to residual accumulation on sidewalls during the patterning of thin films, which causes short circuits and defects in devices, especially in high-integration and micronization devices like LEDs and LCDs.
Innovation Solution
A negative photoresist composition comprising an alkali-soluble binder resin, a halogen-containing first photo-acid generator, a triazine-based second photo-acid generator, and a cross-linking agent with an alkoxy structure, which forms a photoresist pattern with a reverse taper profile by generating acids and forming a cross-linked structure upon exposure and development, enhancing sensitivity and preventing residual accumulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional negative photoresist composition is used, then the patterning process can be performed, but the photoresist pattern does not form a reverse taper profile causing residuals to accumulate on sidewalls
Solution Approach 1:
The patent modifies the chemical composition parameters of the photoresist by incorporating specific additives including a sulfonic acid compound, carboxylic acid compound, and silane crosslinking agent. These compositional changes enable the formation of a reverse taper profile in the photoresist pattern, preventing residual accumulation on sidewalls during the patterning process.
Solution Approach 2:
The patent creates a composite photoresist system by combining multiple functional components: the negative photoresist base composition, sulfonic acid compound for etch resistance, carboxylic acid compound for adhesion enhancement, and silane crosslinking agent for structural stability. This composite formulation achieves the reverse taper profile while maintaining pattern integrity and preventing residuals.
2Reliability
If conventional negative photoresist composition is used, then the process can be completed, but the sensitivity is not high enough for effective patterning in high integration devices
Solution Approach 1:
The patent enhances the photoresist sensitivity by adjusting chemical composition parameters, specifically incorporating sulfonic acid compounds and carboxylic acid compounds in optimized concentrations. These modifications improve the photoresist's response to exposure light, enabling effective patterning in high integration and micronization devices where high sensitivity is critical.
3Object-generated harmful factors
If photoresist pattern with reverse taper profile is formed, then residual accumulation is prevented, but the photoresist pattern becomes harder to remove after patterning
Solution Approach 1:
The patent introduces a silane crosslinking agent as a chemical intermediary that modifies the photoresist structure to form a reverse taper profile preventing residual accumulation. The crosslinking agent creates a controlled network structure that maintains the reverse taper geometry while preserving the ability to remove the photoresist pattern after patterning is complete.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high sensitivity and forms photoresist patterns with a reverse taper profile, minimizing residual accumulation and facilitating easy removal, thereby reducing defects and ensuring effective patterning of thin films in devices like LEDs and LCDs.
Implementation Method 1
a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; exposing a defined region of the composition applied on the substrate
Implementation Method 2
a cross-linking agent including an alkoxy structure; forming a photoresist pattern with a reverse taper profile; forming a target thin film on the photoresist pattern
Data Source
AI summary
The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.