Negative Refraction Light Extraction Structure for Semiconductor Luminance
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Solution Overview
Problem
Semiconductor light emitting devices face challenges in achieving high light extraction efficiency and uniform light distribution due to their inherent characteristics, which limit their performance in applications such as displays and lighting.
Innovation Solution
A light emitting device is designed with a light extraction structure comprising alternately disposed dielectric and metal layers to create a negative refractive index, enhancing light extraction efficiency by allowing light to be outputted externally rather than being trapped inside the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a semiconductor light emitting device is used to achieve high-luminance light, then the luminance is improved, but the light extraction efficiency is lowered due to difficulty in extracting light to the outside
Solution Approach 1:
The patent introduces a light extraction structure with alternating high and low refractive index layers arranged in multiple dimensions. This multi-layer structure creates additional optical paths and interfaces for light extraction, transforming the light propagation from a single-direction constraint to multi-dimensional extraction, thereby improving light extraction efficiency while maintaining high luminance
Solution Approach 2:
The patent employs a composite light extraction structure consisting of alternating layers of high refractive index material and low refractive index material. This composite structure exploits the refractive index contrast between different materials to enhance light extraction through multiple internal reflections and refractions, resolving the contradiction between high luminance and low extraction efficiency
2Illumination intensity
If a semiconductor light emitting device is used, then high-luminance light is obtained, but the light efficiency is not uniform
Solution Approach 1:
The patent applies local quality by designing the light extraction structure with alternating high and low refractive index layers that create localized extraction zones. Different regions of the light emitting device have optimized extraction characteristics through this layered structure, ensuring uniform light efficiency across the entire device surface while maintaining high luminance
Solution Approach 2:
The multi-layer light extraction structure adds dimensional complexity to the light extraction process, creating multiple extraction pathways at different depths and angles. This dimensional approach distributes light extraction more evenly across the device, improving uniformity of light efficiency while preserving high luminance output
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly improves light extraction efficiency and achieves uniform light distribution, maximizing the output of light from the semiconductor light emitting device.
Implementation Method 1
a light extraction structure on the light emitting structure, wherein the light extraction structure comprises a plurality of first layers and a plurality of second layers which are alternately disposed with each other to have a negative refraction index
Data Source
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Figure 3A~3B
AI summary
Disclosed is a light emitting device. The light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers; and a light extraction structure on the light emitting structure. The light extraction structure comprises a plurality of first layers and a plurality of second layers which are alternately disposed with each other to have a negative refraction index.