Negative Resist Composition for 50 nm Pattern Resolution
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Solution Overview
Problem
Conventional negative resist compositions face challenges in forming patterns of 50 nm or less due to issues like bridge formation, undercut, and pattern collapse, especially when used on substrates with chromium oxynitride, which require higher resolution and etching resistance.
Innovation Solution
A negative resist composition comprising a base polymer with specific repeating units, an acid generator, and a basic component, including amine compounds with a carboxyl group, which enhances crosslinking efficiency, adhesion to the substrate, and etching resistance, preventing bridge formation and undercut while achieving high resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional negative resist compositions are used for high integration patterning, then sensitivity and resolution can be obtained, but bridge formation and pattern collapse occur at 50 nm or less
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating specific basic compounds (amines with carboxyl groups) and controlling the polymer structure to optimize crosslinking density and acid diffusion characteristics, enabling stable pattern formation at 50 nm resolution
Solution Approach 2:
The patent creates a composite resist system combining polymer matrices with specific basic compounds and crosslinking agents, forming a multi-component system that provides both high resolution and pattern stability through synergistic interactions between components
2Manufacturing precision
If pattern size is miniaturized to 50 nm or less, then higher resolution is achieved, but bridge formation and undercut occur
Solution Approach 1:
The patent applies local quality control by using basic compounds that concentrate in specific regions to control acid diffusion locally, preventing bridge formation at critical dimensions while maintaining overall pattern fidelity
Solution Approach 2:
The basic compounds act as intermediary substances that mediate between the acid generator and the polymer matrix, controlling the acid-catalyzed crosslinking process to prevent unwanted bridge formation and undercut at miniaturized dimensions
3Manufacturing precision
If chemically amplified negative resist is used on chromium oxynitride substrate, then sensitivity is improved, but undercut occurs at substrate interface
Solution Approach 1:
The patent converts the potentially harmful interaction between acid and chromium oxynitride substrate into a beneficial effect by using basic compounds to control acid distribution, preventing undercut while maintaining the sensitivity benefits of chemically amplified resists
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition allows for the formation of patterns with minimal bridge occurrence and suppressed pattern collapse, achieving high resolution and desirable profile even at 50 nm or less, particularly on substrates with chromium oxynitride, by optimizing crosslinking and adhesion properties.
Implementation Method 1
an acid generator generating an acid by decomposition with an exposure light
Implementation Method 2
a basic compound to control diffusion of the acid generated by the light exposure
Data Source
AI summary
There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same.