Negative-Working Resist Composition for High Sensitivity and Resolution
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Solution Overview
Problem
Current semiconductor lithography technologies face challenges in achieving high sensitivity, high resolution, and excellent line width roughness (LWR) performance, particularly in forming fine patterns with line widths of 50 nm or less, where existing resist compositions often compromise on these properties.
Innovation Solution
A pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition containing an acid-decomposable resin, an acid generator, and a compound that decomposes to generate acid, exposed to actinic rays or radiation, and developed with an organic solvent to enhance sensitivity and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If higher sensitivity is sought for in resist composition, then the wafer processing time is shortened, but the pattern profile or the resolution indicated by the limiting resolution line width is deteriorated
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating specific resin components with acid-decomposable groups and controlling the ratio of soluble to insoluble resin components. This allows the system to achieve high sensitivity while maintaining good pattern profiles by adjusting the chemical composition rather than simply increasing sensitivity parameters
Solution Approach 2:
The patent uses a composite resist composition containing multiple resin components including phenolic resin with acid-decomposable groups, other phenolic resin, and solvent. This composite structure enables the system to simultaneously achieve high sensitivity and good resolution by combining the complementary properties of different resin materials
2Productivity
If chemical amplification positive resist composition is used to elevate sensitivity, then the photosensitive speed is improved, but the pattern profile or resolution is compromised
Solution Approach 1:
The patent inverts the conventional approach by using a negative-working resist composition instead of positive-working. The exposed areas become insoluble while unexposed areas remain soluble, allowing the system to achieve both high sensitivity and good pattern profiles through this inverted development mechanism
Solution Approach 2:
The patent changes the working mechanism parameter from positive to negative development, and adjusts the chemical composition parameters including the ratio of soluble to insoluble resin components. This dual parameter change enables simultaneous achievement of high photosensitive speed and good pattern profile
3Productivity
If fine patterns with line widths of 50 nm or less are formed, then the integration degree is increased, but the resolution and pattern profile deteriorate
Solution Approach 1:
The patent adjusts critical parameters including the ratio of soluble to insoluble resin components (5-50 mass%), acid generator concentration (1-20 mass%), and solvent type. These parameter optimizations enable the formation of fine patterns with 50 nm or less line width while maintaining good resolution and pattern profile
Solution Approach 2:
The patent introduces compounds with specific local functions including acid generators that concentrate acid in exposed areas, and resin components with acid-decomposable groups that locally change solubility. This local quality enhancement enables precise pattern formation at 50 nm scale
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high sensitivity, high resolution, and improved LWR performance by amplifying the acid generation in the exposed areas, leading to enhanced pattern formation in semiconductor microfabrication.
Implementation Method 1
a compound capable of generating an acid upon irradiation with an actinic ray or radiation
Implementation Method 2
a resin containing an acid-decomposable repeating unit and being capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid
Data Source
AI summary
There is provided a pattern forming method comprising (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin containing an acid-decomposable repeating unit and being capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a compound capable of decomposing by the action of an acid to generate an acid, and (D) a solvent; (2) a step of exposing the film by using an actinic ray or radiation, and (4) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.