NEM Switch Memory Cell for Low-Power Non-Volatile Storage
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Solution Overview
Problem
Current SRAM memory cells are energy-inefficient, volatile, and occupy large areas due to high dynamic and leakage energy consumption, and they require significant space per bit, necessitating a more efficient and compact non-volatile memory solution.
Innovation Solution
The development of a data storage cell utilizing two nano electromechanical switches with a complementary positioning mechanism and a read selector, allowing for fast read access and low-power operation, which can be implemented as either horizontal or vertical beam switches, resulting in a compact and dense memory arrangement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If SRAM memory cells are used, then fast read access is achieved, but energy consumption (dynamic and leakage) and area per bit increase significantly
Solution Approach 1:
The patent replaces the purely electrical switching mechanism in SRAM with a hybrid electromechanical system using NEM switches. The NEM switch uses mechanical beam movement actuated by electrostatic forces to achieve switching, combining electrical control with mechanical action to reduce leakage current while maintaining fast switching speeds for rapid read access.
Solution Approach 2:
The patent changes the fundamental operating parameters of the memory cell by using NEM switches with vastly different leakage characteristics compared to CMOS transistors. The mechanical contact nature of NEM switches enables near-zero leakage current when closed, fundamentally altering the energy consumption profile while preserving fast switching capability.
2Speed
If SRAM memory cells are used, then fast read access is achieved, but area per bit increases
Solution Approach 1:
The replacement of CMOS transistors with NEM switches enables a more compact cell design. The NEM switch's mechanical beam structure allows for smaller footprint compared to the multiple transistors required in SRAM, reducing area per bit while maintaining the fast read access characteristic.
3Duration of action of stationary object
If non-volatile memory elements are used, then data retention without power is achieved, but read current must flow through memory element limiting read performance
Solution Approach 1:
The NEM switch's mechanical contact mechanism provides near-zero resistance when closed, allowing high-speed read operations without the performance degradation typically associated with non-volatile memory read currents. The mechanical closure creates an excellent conductive path that enables fast read access while maintaining non-volatile data retention.
4Duration of action of stationary object
If NEM switches are used with read current flowing through them, then non-volatile storage is achieved, but reading speed decreases
Solution Approach 1:
The mechanical beam contact in NEM switches creates a low-resistance conductive path when closed, enabling fast read operations. This mechanical contact mechanism overcomes the typical trade-off in non-volatile memories where read current must flow through the memory element, as the NEM switch's physical closure provides excellent conductivity for rapid data retrieval.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides a non-volatile, low-power memory architecture with reduced leakage and active read/write energy consumption, enabling faster read operations and a smaller memory footprint compared to traditional SRAM cells, while maintaining high density and efficiency.
Implementation Method 1
The moveable beam is actuated by an electrostatic force against a control gate
Implementation Method 2
a first moveable beam fixed to a first anchor, a first control gate and a second control gate, a first output node against which the first moveable beam can be positioned
Data Source
AI summary
A data storage cell for storing data is disclosed. In one aspect, the data storage cell comprises a first nano electromechanical switch comprising a first moveable beam fixed to a first anchor, a first control gate and a second control gate, a first output node against which the first moveable beam can be positioned. The data storage cell also comprises a second nano electromechanical switch comprising a second moveable beam fixed to a second anchor, a third control gate and a fourth control gate. The second moveable beam can be positioned against the first output node. Further, the first nano electromechanical switch and the second nano electromechanical switch are configured for selecting a first or a second state of the data storage cell and are configured for having their moveable beam complementary positioned to the first output node. A memory arrangement of such data storage cells is also disclosed, as well as methods for writing data to the data storage cells and for reading data from the data storage cells.