Nanoelectromechanical Switches TRIZ Cases
- Cantilever NEM Decoder Circuit for Dense Memory Array Access
Cantilever NEM decoders over memory arrays enable random cell access while cutting CMOS decoder area and tuning decoupling capacitance.
- GeTe Nano Relay Actuation Through Reversible Phase Expansion
Reversible GeTe phase expansion drives a non-volatile nano relay, balancing high work density with stable MEMS/NEMS switching.
- Cantilever NEM Decoder Layout for Interconnect-Level Memory Access
Cantilever NEM decoders embedded above memory cells shift word and bit line access into interconnect layers, reducing CMOS area overhead.
- Laminated Graphene Membrane Structure for Stable NEMS Tension
A laminated graphene-polymer membrane over tapered cavities controls drying-induced tension and improves NEMS yield and stability.
- Phase-Change Nano Relay Using GeTe Volumetric Expansion
Reversible GeTe phase transitions create about 10% volume change, enabling non-volatile nano relay actuation with stable room-temperature operation.
- NEMS Switch Metal-to-Metal Contacts Mitigate Stiction
Metal overhangs in NEMS switches enable low-resistance conduction while pre-biasing mitigates stiction to reduce switching voltage.
- Carbon Nanotube Molecular Switches for Transistor Scaling
Encapsulated particles move between resistance states to enable 100 GHz switching beyond photolithography limits.
- Magnetic Contact Material for Arc Blowing
Composite contacts use embedded magnetic particles to destabilize arcs, reducing erosion and welding risks in high-voltage systems.
- Non-volatile Graphene Nanomechanical Switch Hysteresis
A graphene nanomechanical switch uses Van der Waals forces to maintain state without continuous energy input.
- NEM Switch Memory Cell for Low-Power Non-Volatile Storage
Electrostatic NEM switches replace SRAM transistors to cut leakage energy and area per bit while maintaining fast read access speeds.
- Nanowire NEMFET Switching via Electrostatic Deflection
A three-terminal nano-electro-mechanical field-effect transistor achieves zero sub-threshold slope by deflecting a suspended nanowire toward the gate electrode.