Nanoelectromechanical Switches TRIZ Cases
- Cantilever NEM Decoder Circuit for Dense Memory Array Access
Cantilever NEM decoders over memory arrays enable random cell access while cutting CMOS decoder area and tuning decoupling capacitance.
- GeTe Nano Relay Actuation Through Reversible Phase Expansion
Reversible GeTe phase expansion drives a non-volatile nano relay, balancing high work density with stable MEMS/NEMS switching.
- Cantilever NEM Decoder Layout for Interconnect-Level Memory Access
Cantilever NEM decoders embedded above memory cells shift word and bit line access into interconnect layers, reducing CMOS area overhead.
- Laminated Graphene Membrane Structure for Stable NEMS Tension
A laminated graphene-polymer membrane over tapered cavities controls drying-induced tension and improves NEMS yield and stability.
- Phase-Change Nano Relay Using GeTe Volumetric Expansion
Reversible GeTe phase transitions create about 10% volume change, enabling non-volatile nano relay actuation with stable room-temperature operation.