Nested Trench Capacitor Layout for Higher Capacitance in Thin Electronics
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Solution Overview
Problem
There is a growing demand for capacitors with higher capacity to meet the requirements of miniaturized and thinned electronic products, but existing multilayer capacitors fall short in this regard.
Innovation Solution
The proposed capacitor design includes a substrate with a first capacitor portion featuring a first insulation layer with trenches, a first electrode within the trenches, a dielectric layer, and a second electrode. A second capacitor portion is added, comprising a second insulation layer, plate-shaped electrodes, and a plate-shaped dielectric layer, with interlayer and electrode connection portions for enhanced performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If existing multilayer capacitor structures are used, then the device complexity is low and manufacturing is easy, but the capacitance capacity is insufficient for miniaturized electronic products
Solution Approach 1:
The patent implements a nested capacitor structure where a second capacitor portion is formed on top of the first capacitor portion. The second capacitor portion includes plate-shaped electrodes and dielectric layers that are stacked vertically, nesting additional capacitance elements within the same footprint area. This nesting approach increases total capacitance capacity without proportionally increasing the device footprint, effectively resolving the contradiction between capacity and complexity.
Solution Approach 2:
The patent transitions from a planar capacitor layout to a three-dimensional stacked structure. By adding vertical stacking of capacitor portions with interlayer connection portions, the design utilizes the third dimension (height) to increase capacitance capacity. This dimensional change allows multiple capacitor elements to be stacked within the same planar area, increasing capacity without linearly increasing device complexity.
2Quantity of substance
If capacitance capacity is increased through additional electrode layers, then the capacity improves, but the device size increases
Solution Approach 1:
The nested capacitor structure places the second capacitor portion vertically on top of the first capacitor portion, nesting additional capacitance elements within the same horizontal footprint. This approach increases capacitance capacity by utilizing vertical space rather than expanding the device footprint horizontally, effectively resolving the contradiction between capacity and device size.
Solution Approach 2:
By stacking capacitor portions in the vertical dimension rather than expanding in the horizontal plane, the patent increases capacitance capacity without proportionally increasing the overall device volume. The interlayer connection portions enable electrical connectivity between stacked layers, allowing capacity enhancement through vertical integration rather than horizontal expansion.
Data Source
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AI summary
A capacitor may include a substrate, a first capacitor portion disposed on the substrate, and a second capacitor portion disposed on the first capacitor portion. The first capacitor portion may include a first insulation layer having a plurality of trenches, a first electrode disposed on the first insulation layer and in the plurality of trenches, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.