Vertically stacked unit capacitor cells raise capacitance in a small footprint while lowering ESR and inductance and improving breakdown voltage.
Segmented unit capacitor cells pack electrodes densely while insulating layers and series links raise capacitance and breakdown voltage in less space.
Alternating vertical capacitor elements are stacked and embedded to lower ESR, raise capacitance, and increase functional density.
Through-hole internal electrodes and stacked unit capacitors raise capacitance density without increasing capacitor thickness.
Integrated cooling channels and a sealing plate let one refrigerant path cool capacitor and power modules, cutting inverter size and complexity.
Closed-curve trenches aligned to substrate elastic modulus reduce intrinsic stress and wafer bow while preserving capacitance and capacitor reliability.
An adapter links a sensor to sealed power capacitor housings, enabling internal gas pressure monitoring in older rail vehicles without capacitor replacement.
Segmented double-sided cooling channels isolate leakage paths, stabilize coolant pressure, and improve heat dissipation for capacitors and power devices.
Base-supported 3D capacitors enable tighter differential-line placement, reducing parasitic coupling and surface area while controlling impedance.
Vertical side-plate fixation with band-shaped members secures multiple capacitors in less space while preserving access and airflow for cooling.
A single molded resin structure fixes the bus bar and chip capacitor together, cutting mold count, cost, and assembly steps.
Integrated capacitor plates with different dielectric gaps deliver broad frequency filtering in a compact layout with low ESR and inductance.
Multiple resin protrusions and metal frames stabilize stacked capacitors, preserving package flatness and board mounting accuracy.
An external side-surface conductor links series capacitor portions while blocking crack-driven short-circuits and enabling fault detection.
Localized passive-element regulators give each SoC block its own voltage domain, cutting IR-drop impact and system power use.
An insulating layer extends beyond the solid electrolyte edge to prevent shorts while allowing more flexible via conductor placement.
A stacked trench-and-oxide capacitor layout boosts capacitance while isolating substrate stress and avoiding a separate joining process.
Electrically conductive cooling channels between wound capacitor layers remove heat while carrying potential and preserving compact high-power design.