Crosslinked Neutral Underlayers for Low-Defect Contact Hole Self-Assembly
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Solution Overview
Problem
Existing self-assembly methods for block copolymers on semiconductor and inorganic substrates fail to form perpendicular nanophase segregated arrays with low defect levels, which are necessary for integrated circuit manufacturing.
Innovation Solution
A novel crosslinking polymer composition forms a crosslinked MAT neutral layer on substrates, allowing block copolymers to self-assemble into low-defect arrays of etch-resistant or etchable cylinders, which can be plasma-etched to create arrays of contact holes or posts suitable for IC manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If self-assembly methods are used on semiconductor and inorganic substrates, then nanophase segregated arrays can be formed, but high defect levels and inability to form perpendicular arrays occur
Solution Approach 1:
The patent introduces a neutral layer as an intermediary between the semiconductor substrate and the block copolymer. This neutral layer mediates the interaction, enabling the block copolymer to self-assemble into low-defect perpendicular arrays. The neutral layer composition specifically designed in this patent resolves the adhesion and alignment issues that cause high defect levels when block copolymers are directly assembled on semiconductor substrates.
2Measurement precision
If conventional lithography is used, then photoresist patterns can be formed, but resolution is limited by wavelength and numerical aperture
Solution Approach 1:
The patent employs directed self-assembly where the block copolymer automatically organizes itself into periodic nanoscale patterns on the neutral layer without requiring additional lithographic steps. The system self-organizes through thermodynamic driving forces, achieving resolutions below the diffraction limit of conventional lithography and enabling continuous adaptation to different pattern requirements by selecting appropriate block copolymer compositions.
3Productivity
If rapid curing is implemented, then processing time is reduced, but the need for rinse steps may increase
Solution Approach 1:
The patent utilizes photoacid generators and specific UV exposure parameters to achieve rapid curing of the neutral layer without requiring subsequent rinse steps. By optimizing the chemical composition and photoreactivity parameters of the neutral layer, the curing process is accelerated while maintaining complete polymerization, thereby reducing processing time without adding process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-resolution, low-defect arrays of contact holes or posts on substrates, meeting the requirements of integrated circuit manufacturing without the need for a rinse step and with rapid curing times.
Implementation Method 1
Rapid cross-linkable neutral underlayers for contact hole self-assembly
Implementation Method 2
Self-assembly of block copolymers is a method useful for generating smaller and smaller patterned features
Implementation Method 3
Upon plasma etching, (e.g. oxygen plasma), a self-assembled array of etch resistant perpendicular cylinders will form pillars in the etched substrate
Data Source
AI summary
The present invention relates to a random copolymer comprising repeat units of structure (I), (II), (III), and (IV). The invention also pertains to a neutral layer composition comprised of said random copolymer and also pertains to the use of said neutral layer composition to make a crosslinked neutral layer film on a substrate, which can enable self-assembly of a film of a block copolymer overlying said crosslinked neutral layer, wherein said block copolymer contains etch resistant and etchable block, and whose self-assembled pattern is used, through etching, to create either an array of contact holes or posts in said substrate.