Nickel-Phosphorus Shower Head Coating for Selective Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current substrate processing technologies face challenges in achieving optimal etch selectivity and process reproducibility during semiconductor manufacturing, particularly in selectively etching materials like SiGe layers with high germanium content, due to limitations in radical adsorption and etchant formation.
Innovation Solution
A substrate processing apparatus and method featuring a coating layer with nickel (Ni) containing phosphorus (P) on the shower head and gas distribution plates, which enhances radical adsorption and etchant formation by adjusting the phosphorus content to optimize etch selectivity and reproducibility, utilizing a plasma processing technique to form fluorine radicals and their recombination into a fluorine etchant for precise substrate processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional substrate processing is used, then basic etching can be performed, but etch selectivity is insufficient for selectively etching SiGe layers with high germanium content
Solution Approach 1:
The patent applies local quality by coating only specific surfaces (shower head and gas distribution plates) with a nickel-phosphorus alloy layer having controlled phosphorus content (5-20 at%). This localized modification creates different surface properties in different regions: the coated surfaces provide enhanced radical adsorption for improved etch selectivity, while uncoated regions maintain original plasma generation characteristics, achieving both selectivity and reproducibility
Solution Approach 2:
The patent changes the chemical composition parameter of the shower head and gas distribution plate surfaces by applying a nickel-phosphorus alloy coating with specific phosphorus content (5-20 at%). This parameter change transforms the surface chemistry to enhance radical adsorption capability, directly improving etch selectivity for SiGe layers while maintaining process reproducibility through controlled coating composition
2Manufacturing precision
If radical adsorption is enhanced to improve etch selectivity, then selective etching performance improves, but process reproducibility may deteriorate
Solution Approach 1:
The patent uses composite materials by combining nickel and phosphorus to form a nickel-phosphorus alloy coating on the shower head and gas distribution plates. This composite material provides synergistic effects: nickel provides structural stability and catalytic activity, while phosphorus enhances radical adsorption. The controlled composition (5-20 at% P) ensures both improved etch selectivity and maintained process reproducibility
Solution Approach 2:
The patent implements feedback control by precisely controlling the phosphorus content in the nickel-phosphorus alloy coating within a specific range (5-20 at%). This controlled composition provides optimal radical adsorption for improved selectivity while maintaining sufficient plasma generation capability for process reproducibility, effectively balancing both requirements through compositional feedback
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The described solution significantly improves etch selectivity and process reproducibility, allowing for efficient and selective etching of SiGe layers with high germanium content, as demonstrated by increased etch ratios and reduced standard deviations, thereby enhancing semiconductor device manufacturing precision.
Implementation Method 1
a first plasma forming region in which a first plasma is formed
Implementation Method 2
a coating layer covering at least a portion of a surface of the shower head, the portion of the surface of the shower head including an upper surface of the shower head, the coating layer containing phosphorus (P)
Data Source
AI summary
A substrate processing apparatus includes first to fourth sets of inner surfaces that at least partially define a plasma forming region, a gas supply region, gas mixing region, and a substrate processing region, respectively, where the substrate processing apparatus is configured to form a plasma within the plasma forming region, supply a process gas from the gas supply region to the plasma forming region, form an etchant in the gas mixing region based on recombination of radicals supplied from the plasma forming region, and process a substrate based on the etchant within the substrate processing region; a shower head between the gas mixing region and the substrate processing region and configured to supply the etchant to the substrate processing region; a coating layer covering a surface of the shower head and including nickel (Ni) containing phosphorus (P); and a heater configured to control a surface temperature of the shower head.