Electric Discharge Tubes TRIZ Cases

A collimator with a thinner inner region and thicker periphery controls sputtered particle entry angles to deposit uniform thin films on semiconductor wafers.

Segmented annular body expands anode surface area to reduce contamination and re-sputtering from eroded shields.

Multi-chamber PECVD apparatus synchronizes RF generators via time-difference calibration, resolving chamber mismatch defects and improving wafer quality.

A sputtering method uses pre-sputtering phases to deposit target material on a baffle plate and substrate, stabilizing the process voltage.

Segmented rotatable vanes with longitudinal cooling conduits shield vacuum pumps from heat and debris while maintaining precise pressure control.

A plasma processing apparatus incorporates a microwave rotation generator to stabilize the electric field distribution within the decompression chamber.

A combined SEM-CL and FIB-IOE microscopy system integrates electron and ion beams with a shared reflector for dual-mode operation.

Dynamic workpiece tilting and synchronized resolving aperture movement maintain constant implant angles and block contaminants to reduce shadowing effects.

Conductive annular members detect plasma state current via microwave radiation, resolving monitoring disturbance that degrades processing efficiency.

A conductive support protrudes from an LED insulation housing to route static electricity away from the chip.

A vacuum exhaustion structure uses a high-emissivity inner layer to absorb thermal radiation from the pump inlet port.

Selective coating layers on the support base control thermal conductivity to resolve temperature variations and improve deposition thickness uniformity.

Dynamic cooling parameters prevent spectral shifting by maintaining constant temperature across different UV bulb chemistries.

Tunable impedance devices adjust RF current paths to compensate for chamber asymmetry, achieving 1% azimuthal uniformity.

Melting used sputtering targets removes impurities and lowers costs while maintaining high purity levels.

A single ring-shaped edge electrode with a peripheral groove eliminates multi-electrode alignment complexity while ensuring uniform plasma processing.

Periodic pulsed plasma cycles reduce etching cycle time and substrate damage while maintaining atomic layer precision.

A cobalt-containing protective cap and manganese barrier layer form within semiconductor vias to constrain atomic movement.

Segmented shielding plate with radial through holes isolates plasma generation to prevent unwanted ion irradiation during radical processing.

A plasma dicing method processes semiconductor wafers mounted on a tape within a rigid frame.

Periodic pressure control cycles reduce particle defects by two orders of magnitude, enabling extended high-throughput operation without cleaning downtime.

Electrolyzing deuterium-depleted water yields hydrogen gas with reduced isotopic ratios, preventing neutron radiation during high-energy ion implantation.

An inspection system uses charged particle beam irradiation and energy dispersive X-ray detection to identify buried voids within copper interconnect structures.

A charged particle beam writing apparatus uses a multi-stage deflector system to assign shot figure patterns to smallest deflection region layers.

A plasma reactor matching method adjusts the tilt angle of an RF source power applicator to align non-uniformity functions between two reactors.

Molybdenum paste bonds vias to sintering aid-free alumina, maintaining insulation resistance at high temperatures.

Integrated gas slots in the extraction plate direct residue removal gases toward the substrate surface.

A liquid-cooled casing protects permanent magnets from thermal radiation in unbalanced magnetron sputtering assemblies.

Inductively coupled plasma densifies dielectric films with helium and oxygen to prevent sputtering damage during shallow trench isolation.

Permanent magnets on the counterpole increase magnetic flux density to overcome saturation limits in charged particle beam systems.

Hot pressing MgAl2O4 powder followed by atmospheric sintering yields a high-density white sintered body for sputtering targets.

Radially outward angled structures on a shutter disk direct target material to chamber corners, resolving non-uniform deposition and particle issues.

A pre-treatment process generates a hydrogen radical affecting layer on processing chamber surfaces to condition the environment before workpiece exposure.

Metastable inert gas species induce surface reactions without high-energy ion bombardment, preventing sub-surface damage in underlying layers.

Vacuum chamber zones separate gas introduction and sputtering mechanisms for a reciprocating flexible substrate.

A parked electrostatic chuck uses DC voltage to repel charged particles, preventing deposits that degrade clamping force consistency.

Vertical lips on an annular body minimize material deposition to reduce wafer contamination and shorten cleaning intervals.

Automated magnetic actuation replaces manual probe exchange, reducing production costs and defect rates while improving atomic force microscopy productivity.

Segmenting the control range into non-overlapping sub-ranges eliminates output strain and reduces calibration complexity in electron beam writing apparatuses.

A controller coordinates multiple electron optical systems to determine beam usage based on a unified pitch relation.

Segmented composite layers and dynamic gas flow enable accurate real-time neutron flux monitoring while minimizing dead time and false counts from gamma rays.

Regression models express dimensional variations as functions of pattern size to resolve systematic errors in small feature fabrication.

Sequential local plasma conditioning and remote dry etch eliminate trench recess variations by stabilizing etch rates across varying pattern densities.

A nickel-phosphorus coating layer on a substrate processing shower head enhances radical adsorption to improve etch selectivity and process reproducibility.

Overlaying secondary equations on a convex base equation adjusts shower plate surface geometry to control plasma distribution.

Segmented electrodes paired with ferrite structures concentrate magnetic fields to reduce power loss and improve plasma uniformity.

A swing objective lens system deflects a charged particle beam to reduce paraxial aberration in scanning electron microscopes.

A ceramic heater uses a volume resistivity gradient in its heating element to reduce power consumption while maintaining temperature uniformity.