Plasma Reactor Matching via Tilt Angle Offset
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Solution Overview
Problem
Plasma reactors of identical design produce different etch rate distributions due to mechanical tolerances and assembly factors, leading to inconsistent process results in semiconductor wafer processing.
Innovation Solution
A method to match two plasma reactors by obtaining and analyzing process rate distributions at various tilt angles, determining non-uniformity values, generating a non-uniformity function, and adjusting the tilt angle to align the non-uniformity functions of both reactors, ensuring consistent etch rate distributions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma reactors of identical design are used in large manufacturing facilities, then productivity is improved through increased capacity, but manufacturing precision deteriorates due to differences in etch rate distribution among reactors
Solution Approach 1:
The patent changes the tilt angle parameter of the power applicator to adjust and match the non-uniformity characteristics of different plasma reactors. By varying this geometric parameter, reactors with different inherent non-uniformity profiles can be tuned to produce matching etch rate distributions, thereby resolving the consistency issue while maintaining multi-reactor productivity
2Manufacturing precision
If the tilt angle of the power applicator is adjusted to match non-uniformity functions, then manufacturing precision is improved through consistent etch rate distributions, but device complexity increases due to additional adjustment mechanisms
Solution Approach 1:
The patent implements a dynamically adjustable tilt angle mechanism that allows the power applicator to be tilted relative to the workpiece plane. This dynamic adjustment capability enables each reactor to be individually tuned to match its non-uniformity characteristics, achieving consistent etch rate distributions across multiple reactors without requiring complete redesign of the reactor architecture
Data Source
AI summary
Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset Δα in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset Δα.