Sputtering Method Stabilizing Voltage for Insulating Films
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Solution Overview
Problem
The sputtering process for depositing insulating materials like AlN faces issues with 'target poisoning' due to accumulated positive charges and increased resistance in process components, leading to unstable sputtering voltage and film quality, requiring frequent clearing and restoring processes that disrupt continuous production.
Innovation Solution
A sputtering method involving a first pre-sputtering phase on a baffle plate to clear the target and adjust voltage, followed by a second pre-sputtering phase to stabilize plasma, and a main sputtering phase on the substrate, eliminating the need for frequent clearing and restoring processes and maintaining stable sputtering voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If insulating materials are deposited on the target during sputtering, then the thin film is formed on the substrate, but positive charges accumulate on the target causing target poisoning and preventing plasma from bombarding the target
Solution Approach 1:
The patent applies preliminary action by performing a first pre-sputtering phase before the main sputtering process. During this phase, a conductive layer is formed on the target surface to prevent charge accumulation and target poisoning before the actual insulating material deposition begins, ensuring both film quality and process continuity
Solution Approach 2:
The patent changes process parameters by adjusting power density and sputtering conditions during the pre-sputtering phase to form a conductive layer, then transitions to different parameters for the main deposition phase, optimizing both target conditioning and film formation
2Area of stationary object
If insulating materials are deposited on process components, then the coating area is increased, but resistance of process components changes causing sputtering voltage instability
Solution Approach 1:
The patent applies local quality by using a baffle plate to create different deposition zones. The baffle plate directs sputtered material to deposit on specific areas (substrate and designated surfaces) while protecting other process components from insulating material accumulation, maintaining electrical conductivity and voltage stability in critical components
3Stability of the object's composition
If frequent clearing and restoring processes are performed to maintain target performance, then sputtering voltage stability is improved, but production continuity is disrupted
Solution Approach 1:
The patent performs the target conditioning action in advance during the first pre-sputtering phase, forming a conductive layer before main production begins. This eliminates the need for frequent interruptive clearing and restoring processes during production, maintaining both voltage stability and continuous operation
Solution Approach 2:
The patent enables continuous production by integrating the target conditioning step into the initial phase of each production cycle rather than requiring separate interruptive restoration steps. The pre-sputtering phase prepares the target, and then continuous deposition proceeds without interruption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method stabilizes the sputtering voltage and film quality, improves production efficiency and target utilization, and reduces production costs by eliminating the need for frequent clearing and restoring processes, allowing continuous production with enhanced film-forming stability.
Implementation Method 1
A sputtering process is one of the PVD processes. In the sputtering process, particles (e.g., ions or neutral atoms and molecules) having certain energy bombard a solid surface, so that atoms or molecules of the near solid surface obtain sufficient energy and finally escape from the solid surface.
Implementation Method 2
Physical vapor deposition (PVD) refers to a process of using a physical process to achieve material transfer and depositing atoms or molecules over a surface of a substrate.
Data Source
AI summary
A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.