Multi-Chamber PECVD RF Synchronization Calibration
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Solution Overview
Problem
Current semiconductor manufacturing processes using twin-chamber PECVD systems face issues due to asynchrony of RF generators, leading to uneven wafer quality and defects such as tiny particles or bumps, caused by differences in gas distribution and RF power application between chambers.
Innovation Solution
A semiconductor process method and multi-chamber apparatus that calculates and applies RF power calibration parameters based on gas flow and RF power versus time plots to synchronize RF power application in both chambers, ensuring uniform deposition quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If twin chamber apparatus is used to deposit two wafers simultaneously, then production efficiency is improved, but chamber mismatch problems occur due to asynchrony of RF generators and uneven gas distribution
Solution Approach 1:
The system performs preliminary calibration by generating gas flow versus time plots and RF power versus time plots, then computing time differences between gas flow and RF power application. Calibration parameters are derived in advance to synchronize the RF generators with the gas source, ensuring both chambers operate uniformly from the start of deposition
Solution Approach 2:
The system implements feedback control by continuously monitoring gas flow parameters and RF power application timing, computing time differences, and adjusting RF power calibration parameters based on measured deviations. This closed-loop control ensures synchronization is maintained throughout the deposition process
2Adaptability or versatility
If RF generators are turned off at different times, then operational flexibility is maintained, but tiny particles or bump defects occur on wafers
Solution Approach 1:
The system calculates and applies RF power calibration parameters before deposition begins, pre-synchronizing the RF generators with the gas source timing. This preliminary synchronization prevents timing mismatches that would cause defects, while the system maintains operational flexibility through programmable control
Solution Approach 2:
The system automatically detects timing differences between gas flow and RF power application, computes calibration parameters, and adjusts RF generator timing without external intervention. This self-calibration ensures defect-free operation while maintaining operational autonomy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures that the RF generating units and gas source in the multi-chamber apparatus are synchronized, resulting in uniformly high-quality substrates deposited in both chambers, addressing the issue of chamber mismatch and improving production efficiency.
Implementation Method 1
Plasma Enhanced Chemical Vapor Deposition (PECVD) technology is widely implemented in integrated circuit manufacturing industry
Implementation Method 2
Plasma Enhanced Chemical Vapor Deposition (PECVD) technology is widely implemented in integrated circuit manufacturing industry
Data Source
AI summary
The present disclosure relates to a multi-chamber apparatus and a semiconductor process method which includes steps of applying a first chamber and a second chamber with a process gas and a radio frequency, so as to acquire a first time difference between a plot of the first initial RF applying versus time and a plot of gas flow versus time and a second time difference between a plot of the second initial RF applying versus time and the plot of gas flow versus time in advance, then executing calibration through the first time difference and the second time difference. Accordingly, a first radio frequency generating unit, a second radio frequency generating unit and a gas source unit of the multi-chamber apparatus are turned off simultaneously, such that quality of the first substrate deposited in the first chamber and the second substrate deposited in the second chamber are relatively uniform.