Nitride Semiconductor Diode Heterostructure Thickness Control

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Solution Overview

Problem

Conventional silicon and gallium arsenide semiconductor materials are limited in their application for high-power and high-frequency devices due to their small bandgaps and low breakdown voltages, necessitating the development of wide bandgap materials like silicon carbide and Group III nitride semiconductors for improved performance.

Innovation Solution

The creation of nitride-based semiconductor diodes with a heterostructure, featuring a substrate, semiconductor layers with specific thickness variations, and insulating layers to form a 2-dimensional electron gas, enabling high electron mobility and carrier concentration for high-power and high-frequency operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional silicon or gallium arsenide semiconductor materials are used, then manufacturing processes are simple and well-established, but breakdown voltage is low and power handling capability is limited

Engineering Contradiction:

Improvebreakdown voltageVSAvoidheterostructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs a heterostructure composed of multiple nitride-based semiconductor layers with different bandgap energies (e.g., AlGaN/GaN, AlN/GaN) to achieve high breakdown voltage and power handling capability. This composite material approach allows combining materials with complementary properties to overcome the limitations of single-material systems while maintaining compatibility with existing manufacturing processes.

Inventive Principle:

Principle #40Composite materials

2Reliability

If a heterostructure with varying thickness layers is created, then electron mobility and carrier concentration are improved, but manufacturing precision requirements increase

Engineering Contradiction:

Improveelectron mobilityVSAvoidlayer thickness control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent implements local quality variations by creating semiconductor layers with different thicknesses in specific regions. The second semiconductor layer has a first portion with a first thickness and a second portion with a second thickness greater than the first, allowing optimized electron mobility and carrier concentration in different device regions while using standard epitaxial growth techniques.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent utilizes parameter changes by varying the thickness of semiconductor layers during epitaxial growth to control electronic properties. By adjusting layer thickness parameters (first thickness vs. second thickness), the device achieves optimized electron mobility and carrier concentration without requiring complex post-processing steps.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If Schottky contact processes are used, then contact resistance is reduced, but manufacturing complexity and process steps increase

Engineering Contradiction:

Improvecontact resistanceVSAvoidmanufacturing process steps

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent extracts the need for complex Schottky contact processes by designing ohmic contacts that achieve sufficiently low contact resistance through material selection and structural design. The heterostructure itself is configured to provide efficient charge transport, eliminating the requirement for specialized Schottky contact fabrication steps while maintaining low contact resistance.

Inventive Principle:

Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The nitride-based semiconductor diodes achieve enhanced performance with controlled carrier concentration and reduced turn-on voltage, supporting high-power and high-frequency applications while minimizing leakage current and eliminating the need for Schottky contact processes, thus improving efficiency and reducing manufacturing complexity.

Implementation Method 1

a two-dimensional electron gas (2DEG) is formed on a contact surface of two semiconductors

Methodology Applied

Scientific Effect2-dimensional electron gas formation:

Implementation Method 2

semiconductor materials having different bandgap energy levels forms a heterostructure

Methodology Applied

Scientific EffectHeterostructure effect:

Implementation Method 3

a discontinuous region of a 2-dimensional electron gas is formed in a portion of the first semiconductor layer which corresponds to the first portion of the second semiconductor layer

Methodology Applied

Scientific EffectDiscontinuous electron gas region formation:

Data Source

PatentUS9379102B2Nitride-based semiconductor device

Publication Date: 2016.06.28 SAMSUNG ELECTRONICS CO LTD

AI summary

A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.