Transistor TRIZ Cases

Segmented ferroelectric gate stacks reduce subthreshold swing and improve switching speed without increasing device footprint.

A LTPS thin film transistor uses a thicker gate isolation layer in the transition region to weaken the electrical field and reduce hot carrier effects.

Gradient doped regions in recessed fins lower channel and parasitic resistances, reducing latch-up risks without increasing fabrication complexity.

A Bi-FET cascode power switch uses a bipolar transistor to drive an enhancement mode FET gate.

Through Via technology connects transistors across layers, avoiding silicide film damage from high-temperature annealing.

Integrating photo sensor and lens region into display layers enables fingerprint recognition without reducing touchscreen area.

Segmented semiconductor layers reduce thickness while maintaining conductivity, solving the trade-off between material quantity and transparency.

A load switch with true reverse current blocking uses a TCRB circuit to block reverse current flow, preventing component damage during off states.

A stacked gate structure removes contacts from floating nodes to reduce parasitic resistance and increase effective current.

A semiconductor bit line uses silicon oxide and nitride spacers to minimize parasitic capacitance in trench structures.

An interface layer retards silicide formation at the gate dielectric, ensuring uniform threshold voltage and reduced leakage current.

A boron-rich interface layer encases epitaxial source/drain structures to lower contact resistance.

An oxide thin film transistor structure uses an extended gate electrode to shield the active layer from scattered light exposure.

A PFET ESD circuit provides discharge paths to power nodes.

A double-layered etch stop structure with graded hydrogen content protects oxide semiconductor active layers during deposition.

Self-aligned quadruple patterning forms fins with consistent widths and specific pitches, reducing loading effects that increase critical dimensions.

Voltage clamp circuit reduces rectifier stress by clamping AC signal transients on transformer output coils.

A nitride-based semiconductor diode uses a heterostructure with varying layer thicknesses to form a two-dimensional electron gas for high electron mobility.

Varying fin widths and doping creates different threshold voltages, enabling high gain in a wide band while reducing distortion.

A dual trench gate configuration with a buried floating P-type shield manages carrier injection in the drift region.

Segmenting the high side region with isolation structures prevents short circuits between mixed voltage devices while reducing overall chip size.

A sacrificial reaction layer prevents hydrogen reduction of conductive metal oxide electrodes, maintaining electrical stability and reducing leakage current.

A semiconductor device stacks a capacitor over a transistor using a shared electrode to reduce cell area.

Corner implantation matches multiple gate and planar transistor voltages, reducing manufacturing complexity from separate counter-doping processes.

Guard active regions encircle memory cell areas to isolate peripheral circuits and maintain uniform word trench widths.

Selective epitaxial growth creates dense silicon fin pairs on bulk wafers, overcoming SOI cost and scaling limits.

Vertical silicide pass-through contacts reduce middle-of-line congestion while maintaining design rule compliance and cell area.

A conductive layer surrounds the sidewalls of a stacked semiconductor structure to shield internal components during fabrication.

Segmented annealed contact patterns minimize intersections with substrate fracture planes, reducing cracking risks during fabrication.

A dual-source thin-film transistor design increases carrier collection rate and sensitivity through intersecting source extensions.

A step-difference compensation portion enables precise control over main and sub-column spacer heights in liquid crystal displays.

Shallow oppositely doped regions shield near-surface base areas from trapped charge, minimizing property drift.

Doped regions form p-n junctions to electrically connect vertical transistors, eliminating vertical metal contacts and reducing bit cell area.

Array substrate for liquid crystal display devices reduces mask processes from nine to seven steps, lowering defect rates and production costs.

Shared fin structures enable direct 3D stacking of vertical transistors, resolving CMOS area scaling limits while managing complex contact formation.

Segmenting the gate into multiple conductivity layers with distinct work functions reduces gate-induced drain leakage and improves data retention.

Etching recesses in the metal gate adjusts fin separation distance, enabling diverse threshold voltages without adding process steps.

A CMOS threshold voltage extraction circuit uses current mirrors and matched transistors to measure Vt accurately.

Finger-shaped protrudent portions on the first electrode increase storage capacity without expanding the horizontal area.

Cut gate structures remove dummy gates to directly connect drains, reducing parasitic capacitance and power consumption while enhancing device speed.

Vertical FinFET channels deliver high program current for resistive elements, resolving the contradiction between programming capability and small cell area.

A die integrates a high voltage capacitor using a thick intermediate metal layer conductor and redistribution layer plates.

Boundary region structure removes emitter regions to lower conduction loss and reverse recovery time in FWD regions.

A dual triggered MOS transistor couples an RC circuit to the gate and substrate of a transistor.

A high-resistivity layer limits hole injection and recovery current in a sense diode, resolving parasitic capacitance issues on the substrate.

A thin film transistor structure uses a buffer layer contact hole to connect the drain electrode directly to the light shielding layer.

Relocating string drivers to a vertical semiconductor layer frees CUA space and reduces metal routing congestion.

Excess oxygen fills vacancies in oxide semiconductor layers to stabilize electrical characteristics.

Polysilicon dummy stripes prevent dishing and metal residue accumulation during chemical mechanical polishing, ensuring reliable high voltage diode performance.

One-step CVD deposition creates a conductive layer with uniform grain size, eliminating surface roughness and high resistance from mismatched grains.