Stacked Semiconductor Device With Common Electrode
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Solution Overview
Problem
Existing semiconductor devices with circuit elements comprising capacitors and transistors occupy significant area, limiting their integration and efficiency in various applications such as display devices and memory circuits.
Innovation Solution
The semiconductor device architecture is optimized by stacking a capacitor over a transistor, with a common electrode serving as both a source/drain of the transistor and an electrode of the capacitor, allowing for overlapping regions that reduce the overall area occupied by the circuit elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If circuit elements (capacitor and transistors) are arranged in a conventional planar layout, then the device structure is simple and easy to manufacture, but the area occupied by each cell is large
Solution Approach 1:
The patent transitions from a planar two-dimensional layout to a three-dimensional stacked configuration where the capacitor is positioned vertically over the transistor. This dimensional change allows circuit elements to occupy overlapping spatial regions, significantly reducing the footprint area of each cell while maintaining functional integrity and electrical connections
2Area of stationary object
If the capacitor and transistor are stacked with overlapping regions, then the area occupied by the circuit element is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The patent divides the circuit element into distinct functional segments (transistor region and capacitor region) that are manufactured separately and then integrated through vertical stacking. This segmentation allows each component to be optimized and fabricated using standard processes before being combined in the three-dimensional configuration, managing manufacturing complexity
3Area of stationary object
If a common electrode serves as both source/drain of transistor and electrode of capacitor, then the number of electrodes is reduced and area is minimized, but the electrical connection requirements become more stringent
Solution Approach 1:
The patent merges the source or drain electrode of the transistor with one electrode of the capacitor into a single common electrode structure. This consolidation reduces the total number of discrete electrodes required, minimizes the cell area, and eliminates the need for additional interconnect structures while maintaining all necessary electrical connections through proper structural integration
Data Source
AI summary
An area occupied by a circuit element having at least a capacitor and a transistor is reduced in a semiconductor device. In a semiconductor device including a first transistor, a second transistor, and a capacitor, the first transistor and the capacitor are provided over the second transistor. Then, a common electrode, which serves as one of a source and a drain of the first transistor and one electrode of the capacitor, is provided. In addition, the other electrode of the capacitor is provided over the common electrode.