Nitride Bonding Films for Low-Heat Atomic Diffusion Joining
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Solution Overview
Problem
Existing atomic diffusion bonding methods are limited by the inability to use oxide and nitride films due to their low self-diffusion coefficients, leading to bonding failures and unsuitability for applications requiring insulation, thermal conductivity, and high hardness, especially in sensitive electronic devices.
Innovation Solution
An atomic diffusion bonding method using amorphous nitride films is developed, allowing bonding without surface activation treatment, enabling atomic diffusion at the interface and imparting properties like insulation, thermal conductivity, and wear resistance to the bonded structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If oxide or nitride bonding films are used in atomic diffusion bonding, then properties such as insulation, thermal conductivity, and high hardness are improved, but bonding fails due to low self-diffusion coefficients
Solution Approach 1:
The invention changes the chemical composition parameter of the bonding film from traditional metals to oxides or nitrides, which have low self-diffusion coefficients. This parameter change enables the bonding film to provide insulation, thermal conductivity, and high hardness properties while still achieving successful bonding through controlled atomic diffusion processes.
Solution Approach 2:
The invention uses composite material structures where oxide or nitride bonding films are combined with metal layers. The oxide/nitride layer provides the desired functional properties (insulation, thermal conductivity, hardness) while the metal layer facilitates atomic diffusion for bonding. This composite approach resolves the contradiction between achieving strong bonding and maintaining reliability with oxide/nitride materials.
2Reliability
If traditional atomic diffusion bonding is used with metal bonding films, then bonding is achieved, but properties such as insulation and thermal conductivity are insufficient
Solution Approach 1:
The invention employs composite material structures combining metal layers with oxide or nitride layers. The metal component ensures reliable atomic diffusion bonding while the oxide/nitride component provides enhanced functional properties including insulation, thermal conductivity, and high hardness, thus expanding the adaptability of the bonding application.
Solution Approach 2:
The invention applies different material properties to different regions of the bonding structure. The metal regions provide diffusion pathways for bonding, while the oxide/nitride regions provide functional properties such as insulation and thermal management. This local differentiation of material quality achieves both reliable bonding and enhanced functional versatility.
3Strength
If high pressure and high heat are applied for bonding, then bonding strength is improved, but physical damage occurs to sensitive electronic devices
Solution Approach 1:
The invention changes the bonding mechanism from pressure- and heat-dependent physical bonding to chemistry-dependent atomic diffusion bonding. This parameter change in the bonding approach allows achieving strong bonding at lower temperatures and pressures, thereby avoiding damage to heat-sensitive electronic devices while maintaining bonding strength.
Solution Approach 2:
The invention replaces the mechanical bonding approach (high pressure and heat) with a chemical diffusion approach. Instead of relying on mechanical forces to bond materials, the invention uses atomic diffusion driven by chemical potential gradients, eliminating the need for high pressure and heat that would damage sensitive electronic components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves strong bonding without heat treatment, supports diverse materials, and enhances properties such as insulation and thermal conductivity, suitable for sensitive electronic devices and heat dissipation applications.
Implementation Method 1
bonding is performed by moving the atoms of the materials constituting the bonding film at room temperature using the high atomic diffusion performance on the surface of the bonding film
Implementation Method 2
the high surface energy of a bonding film formed in a vacuum vessel is used as the driving force for bonding
Implementation Method 3
a thin film (hereinafter referred to as the 'bonding film') of metal or semi-metal with a thickness of the nano-order and a microcrystalline or amorphous structure is formed on a smooth surface of one of the wafers, chips, substrates, packages, or other various materials by a vacuum deposition method such as sputtering or ion plating
Data Source
AI summary
Atomic diffusion bonding is carried out using a bonding film comprising a nitride formed at a bonding surface. Operating in a vacuum chamber, a bonding film comprising a nitride is formed on each of flat surfaces of two substrates that each have the flat surface, and, by overlapping the two substrates so the bonding films formed on the two substrates are in contact with each other, the two substrates are joined by the generation of atomic diffusion at a bonding interface between the bonding films.